Serveur d'exploration sur l'Indium - Analysis (France)

Index « Auteurs » - entrée « P. Caroff »
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P. Carcenac < P. Caroff < P. Caron  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 13.
Ident.Authors (with country if any)Title
000092 (2012) Supercurrent and Multiple Andreev Reflections in an InSb Nanowire Josephson Junction
000140 (2012) Anomalous Zero-Bias Conductance Peak in a Nb-InSb Nanowire-Nb Hybrid Device
000467 (2009) Critical thickness for InAs quantum dot formation on (311)B InP substrates
000713 (2007) Characterization of InAs quantum wires on (001)InP : Toward the realization of VCSEL structures with a stabilized polarization
000737 (2006) Étude en température d'un laser à un seul plan de boîtes quantiques d'InAs sur substrat InP émettant à 1,55μm
000740 (2006) Réalisation d'un laser à faible courant de seuil, avec des boites quantiques InAs/InP organisées et couplées latéralement
000780 (2006) Self-assembled InAs quantum dots grown on InP (311)B substrates : Role of buffer layer and amount of InAs deposited
000855 (2006) Carrier dynamics and saturation effect in (113)B InAs/InP quantum dot lasers
000857 (2006) Approach to wetting-layer-assisted lateral coupling of InAs/InP quantum dots
000929 (2005) Molecular beam epitaxy growth of quantum dot lasers emitting around 1.5μm on InP(311)B substrates
000976 (2005) Emission wavelength control of InAs quantum dots in a GaInAsP matrix grown on InP(3 1 1)B substrates
000A08 (2005) Comparison of InAs quantum dot lasers emitting at 1.55 μm under optical and electrical injection
000D65 (2003) Formation of InAs islands on InP(3 11)B surface by molecular beam epitaxy

List of associated KwdEn.i

Nombre de
documents
Descripteur
11Indium arsenides
9III-V semiconductors
7Quantum dots
6Binary compounds
6Nanostructured materials
5Molecular beam epitaxy
5Photoluminescence
4Experimental study
4Indium phosphides
4Quantum dot lasers
3Buffer layer
3Crystal growth from vapors
3III-V compound
3Semiconductor lasers
3Threshold current
2Ambient temperature
2Atomic force microscopy
2Bias voltage
2Critical value
2Density
2Electroluminescence
2Electronic structure
2Energy gap
2GSMBE method
2Gallium tellurides
2Gates
2Indium antimonides
2Infrared laser
2Nanowires
2Optical pumping
2Self-assembly
2Stacking sequence
2Temperature dependence
1Aluminium
1Band splitting
1Calcium selenides
1Charge carrier injection
1Cluster
1Continuous wave
1Coulomb blockade
1Crystal structure
1Current density
1Diffusion
1Doping
1Double layers
1Electronic density of states
1Emission spectra
1Fermi level
1Fourier transformation
1Gallium arsenides
1Gallium phosphides
1Ground states
1Growth mechanism
1Heterojunctions
1Indium phosphide
1Information processing
1Inorganic compounds
1Island structure
1Josephson junctions
1Laser diodes
1Layer thickness
1Line broadening
1Line shape
1Metallic bonds
1Miniband
1Multilayers
1Multiple reflections
1Nanoelectronics
1Nanowire device
1Optical communication
1Overpressure
1Pressure effects
1Proximity effect
1Quantum dot
1Quantum information
1Quantum wells
1Quantum wires
1Quaternary compounds
1RHEED
1Rate equation
1Schroedinger equation
1Semiconductor materials
1Size effect
1Stransky-Krastanow method
1Stress distribution
1Stress effects
1Superconducting junctions
1Superconducting materials
1Superconductivity
1Superconductors
1Surface emitting lasers
1Surface energy
1Temperature distribution
1Temperature effects
1Thickness
1Thin films
1Time resolution
1Tunnel effect
1Vertical cavity laser
1Wetting

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