Auteurs
Analysis
France
Racine
Analysis
France
Repository
Accueil
Racine
Racine

Serveur d'exploration sur l'Indium - Analysis (France)

Index « Auteurs » - entrée « P. Bove »
Attention, ce site est en cours de développement !
Attention, site généré par des moyens informatiques à partir de corpus bruts.
Les informations ne sont donc pas validées.
P. Bourne < P. Bove < P. Braun  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 9.
Ident.Authors (with country if any)Title
000D59 (2003) High current effects in InP/GaAsSb/InP DHBT: Physical mechanisms and parasitic effects
002973 (1991) Sulfur doping of GaAs and GaInP grown by metalorganic molecular beam epitaxy using a hydrogen sulfide gaseous source
002A03 (1991) Metal-organic molecular beam epitaxy of GaAs and Ga0.5In0.5P
002A04 (1991) Metal organic molecular beam epitaxy growth of Ga0.5In0.5P/GaAs quantum well structures
002A06 (1991) MOMBE growth of high quality GaAs/GaInP heterostructures
002A10 (1991) Kinetic study of metalorganic molecular beam epitaxy of GaP, InP, and GaxIn1-xP
002A65 (1991) Chemical beam epitaxy growth of GaAs/Ga0.5In0.5P heterostructures : growth kinetics, electrical and optical properties
002B01 (1990) The first fabrication of n- and p-type Ga0.49In0.51P/Ga(In)As lattice matched and strained HIGFET structures grown by MOCVD
002B35 (1990) MOMBE growth of high-quality InP and GalnAs bulk, heterojunction and quantum well layers

List of associated KwdEn.i

Nombre de
documents		Descripteur
7Epitaxy
6Experimental study
5Gallium Arsenides
5Gallium Indium Phosphides Mixed
5Heterojunction
5Semiconductor materials
4Inorganic compound
4Molecular beam condensation
4Organometallic compound
3Crystal growth
3Quantum well
3Temperature
3Thin film
2Electrical properties
2Gallium Indium Arsenides Mixed
2Kinetics
2Multiple quantum well
2Optical properties
2Photoluminescence
1Activation energy
1Base collector junctions
1CBE method
1Carrier concentration
1Characterization
1Charge carrier trapping
1Chemical vapor deposition
1Current density
1Electric field effects
1Electron mobility
1Exciton
1Field effect transistor
1Gallium Indium Phosphides
1Gallium compound
1Growth
1Heterojunction bipolar transistors
1Impurity
1Impurity density
1Impurity level
1Indium Phosphides
1Indium compound
1Insulating material
1Low temperature
1Microelectronic fabrication
1Molecular beam
1Reflection high energy electron diffraction
1Semiconducting gallium compounds
1Semiconducting indium compounds
1Sulfur
1Theory
1Voltage threshold
1X ray diffraction
1p n junction

Pour manipuler ce document sous Unix (Dilib)

EXPLOR_STEP=IndiumV3/Data/France/Analysis

HfdIndexSelect -h $EXPLOR_AREA/Data/France/Analysis/Author.i -k "P. Bove" 

HfdIndexSelect -h $EXPLOR_AREA/Data/France/Analysis/Author.i  \
                -Sk "P. Bove" \
         | HfdSelect -Kh $EXPLOR_AREA/Data/France/Analysis/biblio.hfd

Pour mettre un lien sur cette page dans le réseau Wicri

{{Explor lien
   |wiki=   *** parameter Area/wikiCode missing *** 
   |area=    IndiumV3
   |flux=    France
   |étape=   Analysis
   |type=    indexItem
   |index=    Author.i
   |clé=    P. Bove
}}
Wicri

This area was generated with Dilib version V0.5.77.
Data generation: Mon Jun 9 10:27:54 2014. Site generation: Thu Mar 7 16:19:59 2024