Serveur d'exploration sur l'Indium - Analysis (France)

Index « Auteurs » - entrée « P. Boring »
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P. Bordes < P. Boring < P. Boucaud  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 13.
Ident.Authors (with country if any)Title
002412 (1994) Excition binding energies and photo-induced tunnelling of carriers in (Ga,In)As-GaAs heterostructures growth with built-in piezoelectric field
002594 (1993) Optical properties of single and double (111)-grown (Ga,In)As-GaAs strained-layer quantum wells under strong photo-injection
002604 (1993) Observation of many-body effects and band-gap renormalization in low-dimensional systems with built-in piezoelectric fields
002644 (1993) Influence of piezoelectric fields on Rhydberg energies in (Ga,In)As-GaAs single quantum wells embedded in p-i-n structures
002671 (1993) First investigation on an ultra-thin InAs/InP single quantum well by thermally detected optical absorption spectroscopy
002685 (1993) Electronic structure and optical properties of (Ga, In)As-(Ga, Al)As quantum wells and superlattices under internal and external strain fields
002702 (1993) Dramatic photoinduction of hole tunneling in double quantum wells with built-in piezoelectric fields
002792 (1992) Uniaxial-stress determination of the symmetry of exciton associated with the miniband dispersion in (Ga,In)As-GaAs superlattices
002826 (1992) Optical transitions involving unconfined energy states in superlattices
002829 (1992) Optical properties and electronic structure of thin (Ga,In)As-AlAs multiple quantum wells and superlattices under internal and external strain fields
002865 (1992) Influence of the spin-orbit split-off valence band in InxGa1-xAs/AlyGa1-yAs strained-layer quantum wells
002913 (1992) Determination of the valence-band offset of GaAs-(Ga,In)P quantum wells by photoreflectance spectroscopy
002959 (1991) Valence-band coupling in thin (Ga,In)As-AlAs strained quantum wells

List of associated KwdEn.i

Nombre de
documents
Descripteur
12Semiconductor materials
11Theoretical study
9Experimental study
8Envelope function
7Gallium Indium Arsenides Mixed
7Inorganic compound
5Binary compounds
5Gallium arsenides
5Indium arsenides
5Optical reflection
5Quantum wells
5Ternary compounds
5Valence band
4Electronic structure
4Exciton
4Gallium Arsenides
4Optical transition
4Photoluminescence
4Thickness
3Band offset
3Band splitting
3Band structure
3Spin orbit interaction
3Strained quantum well
3Strained superlattice
3Tunnel effect
2Aluminium Gallium Arsenides Mixed
2Energy gap
2Excitons
2Hamiltonian
2Hole
2Level splitting
2Multiple quantum well
2Optical modulation
2Piezoelectricity
2Quantum well
2Renormalization
2Superlattice
2Tight binding approximation
2Uniaxial stress
2Very low temperature
1Aluminium Arsenides
1Chemical composition
1Confinement
1Dispersion relation
1Effective mass model
1Energy-level splitting
1Holes
1Illumination
1Indium Arsenides
1Indium Phosphides
1Infrared absorption
1Infrared reflection
1Laser radiation
1Many-body effect
1Many-body problem
1Matrix element
1Miniband
1Near infrared radiation
1Oscillator strengths
1Radiation effects
1Rydberg states
1Screening
1Selection rule
1Self consistency
1Solid solution
1Subband
1Symmetry
1Valence bands
1Variational methods
1Visible reflection
1Wave function

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