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Serveur d'exploration sur l'Indium - Analysis (France)

Index « Auteurs » - entrée « P. Berdaguer »
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P. Benech < P. Berdaguer < P. Bergonzo  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 8.
Ident.Authors (with country if any)Title
000734 (2007) 1516 nm room temperature CW operation of quantum dot InAs/InP(311)B singlemode laser
000D01 (2003) Simple and accurate method to extract intrinsic and extrinsic base-collector capacitance of bipolar transistors
000D36 (2003) Measurement of base and collector transit times in thin-base InGaAs/InP HBT
000F64 (2002) Mux-driver-EAM in single module - a solution for ultra-high bit rate applications
000F98 (2002) InP DHBT technology and design for 40 Gbit/s full-rate-clock communication circuits
001232 (2001) InGaAs/InP DHBT technology and design methodology for over 40 Gb/s optical communication circuits
001428 (2000) Investigation of carbon-doped base materials grown by CBE for Al-free InP HBTs
001B62 (1997) Phototransistor TBH InGaAs/InP pour conversion optique/microondes

List of associated KwdEn.i

Nombre de
documents		Descripteur
4Heterojunction bipolar transistors
4Theory
3Semiconducting indium gallium arsenide
3Semiconducting indium phosphide
2Binary compound
2Binary compounds
2Bipolar transistors
2Heterojunction transistor
2Indium arsenides
2Indium phosphides
2Semiconductor device structures
1Bandpass capacitor
1Base collector capacitance
1Bipolar integrated circuits
1Bipolar transistor
1Capacitance
1Capacitance distribution
1Capacitors
1Carbon additions
1Chemical beam epitaxy
1Clock
1Computer simulation
1Crystal growth from vapors
1Current density
1Dense wavelength division multiplexing
1Digital circuits
1Doping
1Drift-diffusion approach
1Electric potential
1Electric resistance measurement
1Electroabsorption modulator
1Electrooptical emitter
1Epitaxial layers
1Experimental study
1Experiments
1Fabry-Perot resonators
1Flip flop circuits
1Gallium Arsenides
1Gallium arsenides
1Graded base
1High rate transmission
1III-V compound
1III-V semiconductors
1Indium Arsenides
1Indium Phosphides
1Indium phosphide
1Light modulators
1Light polarization
1Mathematical models
1Microwave circuit
1Multiplexing equipment
1Optical communication
1Optical communication circuits
1Performance evaluation
1Photodiodes
1Phototransistor
1Quantum dot lasers
1Quantum dots
1Scattering parameters
1Semiconductor device manufacture
1Semiconductor doping
1Semiconductor growth
1Semiconductor lasers
1Semiconductor materials
1Semiconductor quantum wells
1Static extinction ratio
1Ternary compound
1Ternary compounds
1Transit time

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HfdIndexSelect -h $EXPLOR_AREA/Data/France/Analysis/Author.i  \
                -Sk "P. Berdaguer" \
         | HfdSelect -Kh $EXPLOR_AREA/Data/France/Analysis/biblio.hfd

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