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Serveur d'exploration sur l'Indium - Analysis (France)

Index « Auteurs » - entrée « P. Ballet »
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P. Auvray < P. Ballet < P. Barahona  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 11.
Ident.Authors (with country if any)Title
000396 (2009) Status of p-on-n HgCdTe technologies at DEFIR
000409 (2009) Planar p-on-n HgCdTe FPAs by Arsenic Ion Implantation
000571 (2008) HgCdTe FPAs made by Arsenic-ion implantation
000856 (2006) Bi-color and dual-band HgCdTe infrared focal plane arrays at DEFIR
001092 (2001-07) Growth and characterization of GaInNAs/GaAs multiquantum wells
001685 (1999) Optical properties of (In, Ga)As/GaAs heterostructures grown on conventional (100) and (111)B GaAs substrates
001919 (1998) The determination of e14 in (111)B-grown (In, Ga)As/GaAs strained layers
001920 (1998) Temperature dependence of quantized states in (111)B-grown (In, Ga)As/GaAs multiple quantum well p-i-n diodes
001A17 (1998) Effect of indium surface segregation on excitonic properties in (111)B-grown (In, Ga)As/GaAs multiple quantum wells
001A48 (1997-12-15) Excitonic properties in (111)B-grown (In,Ga)As/GaAs piezoelectric multiple quantum wells
001C29 (1997) Optical investigation of piezoelectric field effects on excitonic properties in (111)N-grown (In, Ga)As/GaAs quantum wells

List of associated KwdEn.i

Nombre de
documents		Descripteur
5Experimental study
4Gallium Arsenides
4Indium
4Indium Arsenides
4Optical absorption
3Arsenic
3Electroreflection
3Focal plane arrays
3Gallium arsenides
3III-V compound
3Microelectronic fabrication
3Molecular beam epitaxy
3Photodiodes
3Sensor materials
2Binary compound
2Binary compounds
2Electroreflectance
2Excitonic process
2Growth mechanism
2III-V semiconductors
2Implants
2Indium compounds
2Ion implantation
2LPE
2Multiple quantum well
2Piezoelectricity
2Quantum wells
2Radiation detectors
2Semiconductor quantum wells
2Strained layer
2Ternary compounds
1Annealing
1Arsenic addition
1Background noise
1Bose Einstein distribution
1Cadmium Tellurides
1Cadmium tellurides
1Chemical beam epitaxy
1Damage
1Dislocation loops
1Electro-optical effects
1Electronic properties
1Electrooptical effect
1Energy gap
1Energy level
1Epitaxial film
1Excited state
1Excitons
1Experimental data
1Far infrared radiation
1Franz-Keldysh effect
1Heterojunctions
1II-VI semiconductors
1Indium addition
1Indium arsenides
1Infrared detectors
1Infrared radiation
1Integrated circuit
1Leakage current
1Leakage currents
1Light coherence
1Line widths
1Liquid phase
1Manufacturing
1Material processing
1Mercury tellurides
1Modulation spectrometry
1Optical properties
1Optical spectroscopy parameter
1Oscillator strength
1Oscillator strengths
1Performance evaluation
1Photodetector
1Photodetectors
1Photodiode
1Photoluminescence
1Photoreflectance
1Piezoelectric device
1Piezoelectric properties
1Piezoelectric semiconductors
1Pixel
1Plasma deposition
1Quantum well
1Quantum yield
1Response functions
1Review
1Secondary ion mass spectrometry
1Segregation
1Semiconductor growth
1Semiconductor materials
1Shunt
1Spatial coherence
1Spectrum analysis
1State of the art
1Statistical model
1Surface segregation
1Ternary compound
1Thermal variation
1Transition energy
1Transmission electron microscopy

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