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Serveur d'exploration sur l'Indium - Analysis (France)

Index « Auteurs » - entrée « P. Abraham »
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P. A. Thiry < P. Abraham < P. Adamiec  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 17.
Ident.Authors (with country if any)Title
001371 (2000) Time resolved photoluminescence of homo- and hetero-epitaxial layers of InP grown on GaAs substrates
001382 (2000) Structural and optical characterization of self-assembled GaInAs islands grown on A1InAs/InP (113) surfaces
001848 (1998-07-01) A comparative study of heterostructures InP/GaAs (001) and InP/GaAs (111) grown by metalorganic chemical vapor deposition
001921 (1998) Temperature dependence of AlInAs band gap energy and AlInAs/InP band offsets
001C26 (1997) Optical properties of InP epilayers grown on (111)B GaP substrates by metalorganic chemical vapor deposition
001C30 (1997) Optical characterization of highly mismatched InP/GaAs(111)B epitaxial heterostructures
001C87 (1997) Effect of methyl surface saturation during growth interruption sequences of metalorganic vapor-phase epitaxy of In0.53Ga0.47As using trimethylarsenic
001D14 (1997) Accurate determination of the band-offset of a quantum semiconductor structure from its capacitance-voltage profile : Application to an InP/Ga0.47In0.53As/InP single quantum well
001D77 (1996-07-08) Trimethylarsenic as an alternative to arsine in the metalorganic vapor phase epitaxy of device quality In0.53Ga0.47As/InP
002014 (1995-10) Etude du triméthylarsenic comme alternative à l'arsine pour l'Epitaxie en Phase Vapeur aux OrganoMétalliques de semiconducteurs III-V sur substrats InP
002136 (1995) Photoluminescence and band offsets of AlInAs/InP
002592 (1993) Optical studies of InP/InAlAs/InP interface recombinations
002599 (1993) Optical characterization of InP/InAlAs/InP interfaces grown by MOVPE
002743 (1993) A new organoindium precursor for electronic materials
002790 (1992) Use of high purity trimethylindium-trimethylamine adduct in MOVPE of InP
002893 (1992) Growth and characterization of type-II/type-I AlGaInAs/InP interfaces
002D43 (1988) Silver on phosphorus-passivated (100) InP. Interface formation and microstructure

List of associated KwdEn.i

Nombre de
documents		Descripteur
13Experimental study
10Photoluminescence
10Semiconductor materials
7Indium Phosphides
6Epitaxy
6Ternary compounds
5Gallium arsenides
5Indium arsenides
5Indium phosphides
4Binary compounds
4Epitaxial layers
4Organometallic compound
4Precursor
4Thin film
3Band offset
3Growth from vapor
3Inorganic compound
2Aluminium Indium Arsenides Mixed
2Aluminium arsenides
2Auger electron spectrometry
2Crystal growth from vapors
2Dislocation density
2Excitons
2Heteroepitaxy
2Heterojunctions
2III-V semiconductors
2Interface
2MOCVD
2Microstructure
2Optical properties
2Organic arsine
2Self consistency
2Solid-solid interfaces
2TEM
2Tertiary arsine
2Thin films
2VPE
1Acceptor center
1Acceptors
1Activation energy
1Aluminium Gallium Indium Arsenides Mixed
1Aluminium Indium Arsenides
1Anisotropy
1Atmospheric pressure
1Band structure
1Binding energy
1Boron
1CV characteristic
1CVD coatings
1Carrier density
1Coverage rate
1Crystal growth
1Crystal orientation
1Differential scanning calorimetry
1Electron diffraction
1Energy band
1Energy gap
1Energy-level splitting
1Experimental result
1Gallium Arsenides
1Gap
1Growth
1Hall effect
1Heterojunction
1High resolution
1Homoepitaxy
1Impurities
1Impurity states
1Indium Arsenides phosphides
1Indium compounds
1Inorganic compounds
1Interface electron state
1Interruption
1Island structure
1Kinetics
1Laser beam
1Line widths
1Localized states
1Low temperature
1Luminescence decay
1Luminescence quenching
1MOVPE
1MOVPE method
1Mismatch lattice
1Multiple layer
1Non radiative recombination
1Operating mode
1Optoelectronic device
1Passivation
1Photoelectron spectrometry
1Poisson equation
1Pressure
1Quantum wells
1Raman spectrum
1S shape
1Saturation
1Schroedinger equation
1Self-assembled layers
1Semiconductor epitaxial layers
1Semiconductor growth

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