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Serveur d'exploration sur l'Indium - Analysis (France)

Index « Auteurs » - entrée « O. Vanbesien »
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O. Valet < O. Vanbesien < O. Vatel  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 15.
Ident.Authors (with country if any)Title
000566 (2008) Impedance Mismatch in Negative Index Photonic Crystals
000872 (2005) Three-dimensional calculation of propagation losses in photonic crystal waveguides
000A62 (2004) Time dependence of directive channelling in photonic crystal based multiport devices
001096 (2001-06-01) Quantum calculations of conduction properties of metal/InAlAs/InGaAs heterostructures
001370 (2000) Transferred-substrate InP-based heterostructure barrier varactor diodes on quartz
001413 (2000) Optical switching of resonant interband tunnelling diodes induced by heavy hole space charge effects
001448 (2000) Fabrication and performance of InP-based heterostructure barrier varactors in a 250-GHz waveguide tripler
001589 (1999-02-15) Type II and mixed type I-II radiative recombinations in AlInAs-InP heterostructures
001673 (1999) Record performance of a 250 GHz InP-based heterostructure barrier varactor tripler
001934 (1998) Step-like heterostructure barrier varactor
001990 (1998) InGaAs/InAlAs/AlAs heterostructure barrier varactors for harmonic multiplication
001999 (1998) High capacitance ratio with GaAs/InGaAs/AlAs heterostructure quantum well-barrier varactors
001A25 (1998) Capacitance engineering for InP-based heterostructure barrier varactor
001A43 (1998) 5-mw and 5% efficiency 216-GHz InP-based heterostructure barrier varactor tripler
002292 (1994-05-01) Resonant tunneling structures with local potential perturbations

List of associated KwdEn.i

Nombre de
documents		Descripteur
6Heterojunctions
5Theoretical study
5Varactors
4Experiments
4Semiconducting aluminum compounds
4Theory
3Binary compound
3Capacitance
3Gallium Arsenides
3Heterojunction
3Heterostructure barrier varactors
3III-V semiconductors
3Indium Arsenides
3Indium phosphide
3Semiconducting indium compounds
3Semiconductor device manufacture
3Varactor diode
2Aluminium Arsenides
2Aluminium compounds
2Carrier concentration
2Experimental study
2Finite difference time-domain analysis
2Gallium arsenides
2III-V compound
2Indium Phosphides
2Indium compounds
2Integrated optics
2Molecular beam epitaxy
2Optical waveguide
2Photonic crystal
2Semiconducting gallium arsenide
2Semiconducting indium phosphide
2Semiconductor heterojunctions
2Semiconductor quantum wells
2Ternary compound
1Aluminum antimonide
1Barrier tripler
1Barrier varactor triplers
1Binary compounds
1Capacitance measurement
1Capacitance voltage characteristics
1Carrier density
1Coplanar line
1Current density
1Current voltage characteristics
1Eigenmode
1Eigenvalues
1Eigenvalues and eigenfunctions
1Electric breakdown
1Electric breakdown of solids
1Electric space charge
1Electrical characteristic
1Electromagnetic wave diffraction
1Electromagnetic wave propagation
1Electron-hole recombination
1Fabrication
1Finite element method
1Fourier transformation
1Frequency band
1Frequency multiplier
1Gallium Phosphides
1Gallium antimonide
1Gas source molecular beam epitaxy Riber (GSMBE) system
1Harmonic multipliers
1Heterostructure barrier varactors (HBV)
1Heterostructures
1High performance
1Impact ionization
1Indium arsenide
1Indium arsenides
1Integrated circuit
1Interface structure
1Leakage current
1Leakage currents
1Left-handed materials
1Lift off
1Manufacturing process
1Metamaterial
1Microelectronic fabrication
1Microwave
1Microwave circuit
1Microwave device
1Millimeter wave devices
1Millimeter waves
1Non linear optics
1Optical losses
1Optical multiplexer
1Optical switches
1Output power
1Performance evaluation
1Photoelectric effect
1Photoluminescence
1Photonic crystals
1Planar technology
1Poisson distribution
1Poisson equation
1Potential barrier
1Potentials
1Probe
1Quaternary compounds

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