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Serveur d'exploration sur l'Indium - Analysis (France)

Index « Auteurs » - entrée « O. Schuler »
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O. Schilling < O. Schuler < O. Seitz  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 12.
Ident.Authors (with country if any)Title
001339 (2000-04-10) Composition effect on the growth mode, strain relaxation, and critical thickness of tensile Ga1-xInxP layers
001661 (1999) Some potentialities of gas-source molecular beam epitaxy with aluminium and phosphorus
001726 (1999) High-power V-band Ga0.51In0.49P/In0.2Ga0.8As pseudomorphic HEMT grown by gas source molecular beam epitaxy
001777 (1999) A gas-source MBE growth study of strained Ga1-xInxP layers on GaAs
001786 (1999) 0.1μm Ga0.51In0.49P/In0.2Ga0.8As PHEMT grown by GSMBE with high DC and RF performances
001788 (1999) 0.1 μm (Al0.5Ga0.5)0.5In0.5P/In0.2Ga0.8As/GaAs PHEMT grown by gas source molecular beam epitaxy
001837 (1998-08-15) X-ray photoemission characterization of interface abruptness and band offset of Ga0.5In0.5P grown on GaAs
001843 (1998-07-15) Interface quality and electron transfer at the GaInP on GaAs heterojunction
001898 (1998-01) Nonselective wet chemical etching of GaAs and AlGaInP for device applications
001908 (1998) XPS study of GaInP on GaAs interface
001A38 (1998) A study of GaInP/GaAs interfaces : metallurgical coupling of successive quantum wells
001D10 (1997) As surface segregation during the growth of GaInP on GaAs

List of associated KwdEn.i

Nombre de
documents		Descripteur
9Experimental study
6Gallium arsenides
5Gallium phosphides
5III-V semiconductors
5Indium phosphides
5Ternary compounds
4Binary compounds
4GSMBE method
4Gallium compounds
4Indium compounds
4Molecular beam epitaxy
3Current density
3Interface structure
3Photoluminescence
3Semiconductor growth
2Etching
2High electron mobility transistors
2Ohmic contacts
2Optimization
2Photoelectron spectroscopy
2Power gain
2Quantum wells
2RHEED
2Segregation
2Semiconductor doping
2Semiconductor epitaxial layers
2Semiconductor materials
2Solid-solid interfaces
2X radiation
2X-ray photoelectron spectra
1Aluminium arsenides
1Aluminium compounds
1Aluminum
1Atomic force microscopy
1Band offset
1Carrier concentration
1Carrier mobility
1Chemical beam epitaxy
1Chemical composition
1Composition effects
1Compressive stress
1Crystal growth from vapors
1Current gain
1Electron density
1Electron transport properties
1Epitaxial layers
1Experiments
1Frequencies
1Gallium Arsenides
1Gallium Phosphides
1Gas source molecular beam epitaxy
1Hall effect
1Hall mobility
1Heteroepitaxy
1High electron mobility transistor
1High power
1III-V compound
1Indium Arsenides
1Indium Phosphides
1Integrated circuit
1Interdiffusion
1Interface states
1Interfaces (materials)
1Interfacial layer
1Microstructure
1Microwave circuit
1Ohmic contact
1Operating mode
1Performance evaluation
1Production process
1Schroedinger equation
1Semiconducting aluminum compounds
1Semiconducting gallium arsenide
1Semiconducting indium gallium arsenide
1Semiconducting indium phosphide
1Semiconductor heterojunctions
1Semiconductor quantum wells
1Semiconductor technology
1Single side doped structure
1Solid solutions
1Stress relaxation
1Stresses
1Surface segregation
1Ternary compound
1Theoretical study
1Theory
1Thin films
1Transconductance
1V band
1Valence bands
1XRD

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HfdIndexSelect -h $EXPLOR_AREA/Data/France/Analysis/Author.i  \
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