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Serveur d'exploration sur l'Indium - Analysis (France)

Index « Auteurs » - entrée « O. Parillaud »
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O. Panchuk < O. Parillaud < O. Pena  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 11.
Ident.Authors (with country if any)Title
000536 (2008) Narrow linewidth and demonstration of saturation spectra of the Cesium at 852nm with high power Al-free DFB laser diodes
000570 (2008) High power Al-free DFB laser diode for atomic clocks : narrow linewidth and demonstration of saturation spectra of the Cesium D2 line
000654 (2007) Narrow linewidth, high-power al-free active region (λ = 852nm) DFB laser diodes for atomic clocks and interferometry applications
000741 (2006) Lasers à boîtes quantiques sur InP à 1,55μm présentant en fonctionnement continu une puissance élevée, un très faible bruit et une longue durée de vie
000767 (2006) Structural characterisation of Sb-based heterostructures by X-ray scattering methods
000820 (2006) High-power al-free active region (λ = 852nm) laser diodes for atomic clocks and interferometry applications
000860 (2006) Al-free active region (λ = 852nm) DFB laser diodes for atomic clocks and interferometry applications
000947 (2005) InP based lasers and optical amplifiers with wire-/dot-like active regions : Self-Organized Quantum Dots
001975 (1998) Low temperature planar regrowth of semi-insulating InP by low pressure hydride vapour phase epitaxy for device application
001982 (1998) Kinetic study of Si incorporation in InP by the hydride vapour phase epitaxy
001E01 (1996-05-06) High quality InP on Si by conformal growth

List of associated KwdEn.i

Nombre de
documents		Descripteur
7Semiconductor lasers
5Atomic clocks
5Compressive stress
5Distributed feedback lasers
5Indium arsenides
5Indium phosphides
5Laser diodes
5Optical resonators
5Quaternary compounds
4Binary compounds
4Experimental study
4Gallium arsenides
4Heterostructures
4Line widths
4Optical waveguides
4Positioning
3Fabry-Perot resonators
3Gallium phosphides
3Radiation quality
3Semiconductor materials
2Crystal growth from vapors
2Current density
2Doping
2Epitaxial layers
2Fabry-Perot interferometers
2Far field
2Feedback
2Gallium Arsenides
2Gallium Phosphides
2Homoepitaxy
2Hydrides
2Indium Arsenides
2Indium Phosphides
2Optical pumping
2Output power
2Quantum wells
2SIMS
2Strained quantum well
2Threshold current
2VPE
2XRD
1Aging
1Aluminium
1Aluminium antimonides
1Arsenic Antimonides
1Buffer layer
1Cold atom
1Device lifetime
1Dynamic properties
1Film growth
1Gyroscopes
1III-V semiconductors
1Impurity density
1Infrared laser
1Iron additions
1Kinetics
1Laser noise
1Low pressure
1Low temperature
1MOVPE method
1Measuring methods
1Mirrors
1Molecular beam epitaxy
1Non destructive method
1Optical microscopy
1Optoelectronic devices
1Photoluminescence
1Quantum dot lasers
1Quantum dots
1Quantum wires
1Reflectometry
1Reliability
1Selective growth
1Semiconductor optical amplifiers
1Silicon additions
1Single mode laser
1Specular reflection
1Static properties
1Superlattices
1Temperature dependence
1Ternary compounds
1Thick films
1Thickness
1Thin films
1X-ray reflection
1X-ray scattering

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HfdIndexSelect -h $EXPLOR_AREA/Data/France/Analysis/Author.i  \
                -Sk "O. Parillaud" \
         | HfdSelect -Kh $EXPLOR_AREA/Data/France/Analysis/biblio.hfd

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