O. Crosnier < O. Dehaese < O. Dehease

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 34.
[0-20] [0 - 20][0 - 34][20-33][20-40]

Ident.	Authors (with country if any)	Title
000274 (2010)		QD laser on InP substrate for 1.55 μm emission and beyond
000467 (2009)		Critical thickness for InAs quantum dot formation on (311)B InP substrates
000487 (2008)		Theoretical study of highly strained InAs material from first-principles modelling : application to an ideal QD
000682 (2007)		First demonstration of a 1.52 μm RT InAs/InP(311)B laser with an active zone based on a single QD layer
000737 (2006)		Étude en température d'un laser à un seul plan de boîtes quantiques d'InAs sur substrat InP émettant à 1,55μm
000780 (2006)		Self-assembled InAs quantum dots grown on InP (311)B substrates : Role of buffer layer and amount of InAs deposited
000844 (2006)		Design and fabrication of GaInAsP/InP VCSEL with two a-Si/a-SiNx Bragg reflectors
000855 (2006)		Carrier dynamics and saturation effect in (113)B InAs/InP quantum dot lasers
000929 (2005)		Molecular beam epitaxy growth of quantum dot lasers emitting around 1.5μm on InP(311)B substrates
000976 (2005)		Emission wavelength control of InAs quantum dots in a GaInAsP matrix grown on InP(3 1 1)B substrates
000A08 (2005)		Comparison of InAs quantum dot lasers emitting at 1.55 μm under optical and electrical injection
000A42 (2004-03-15)		Electron-acoustic phonon interaction in a single quantum dots layer: Acoustic mirror and cavity effects
000C23 (2003-08-15)		Nonlinear absorption temporal dynamics of Fe-doped GaInAs/InP multiple quantum wells
000C52 (2003-03-17)		Ultrashort, nonlinear, optical time response of Fe-doped InGaAs/InP multiple quantum wells in 1.55-μm range
000D61 (2003)		Growth and optical characterizations of InAs quantum dots on InP substrate: towards a 1.55 μm quantum dot laser
000D65 (2003)		Formation of InAs islands on InP(3 11)B surface by molecular beam epitaxy
000F28 (2002)		Room temperature laser emission of 1.5 μm from InAs/InP(311)B quantum dots
000F50 (2002)		Optical spectroscopy and modelling of double-cap grown InAs/InP quantum dots with long wavelength emission
001013 (2002)		Formation of 3D InAs quantum dots on InP substrate
001018 (2002)		Experimental and theoretical studies of electronic energy levels in InAs quantum dots grown on (001) and (113)B InP substrates
001093 (2001-06-25)		High-speed 1.55 μm Fe-doped multiple-quantum-well saturable absorber on InP

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List of associated KwdEn.i

Nombre de documents	Descripteur
24	Experimental study
23	III-V semiconductors
19	Indium arsenides
15	Binary compounds
14	Gallium arsenides
14	Quantum dots
11	Indium compounds
11	Indium phosphides
10	Photoluminescence
8	Molecular beam epitaxy
6	Crystal growth from vapors
6	Quantum dot lasers
6	Semiconductor lasers
6	Semiconductor materials
6	Semiconductor quantum wells
5	Ambient temperature
5	GSMBE method
5	Gallium phosphides
5	Interface structure
5	Nanostructured materials
4	Atomic force microscopy
4	Chemical beam epitaxy
4	Optical pumping
4	Quantum well lasers
4	Ternary compounds
4	Threshold current
3	Buffer layer
3	Current density
3	Excitons
3	Heterojunctions
3	Infrared spectra
3	Iron
3	Laser cavity resonators
3	Optical saturable absorption
3	Semiconductor quantum dots
3	Stacking sequence
3	Theoretical study
3	Time resolved spectra
2	Density
2	Elastic deformation
2	Electroluminescence
2	Electron-phonon interactions
2	Emission spectra
2	Excited states
2	Gallium compounds
2	Ground states
2	Growth mechanism
2	Heterostructures
2	High-speed optical techniques
2	Indium phosphide
2	Instrumentation
2	Island structure
2	Laser mirrors
2	Laser modes
2	Measuring methods
2	Mismatch lattice
2	Modelling
2	Nanostructures
2	Operating mode
2	Optical communication
2	Optical properties
2	Optical switches
2	Photoelectron spectroscopy
2	Quantum wells
2	Quaternary compounds
2	Raman spectra
2	Segregation
2	Self-assembly
2	Semiconductor epitaxial layers
2	Semiconductor growth
2	Stress effects
2	Surface emitting lasers
2	Temperature dependence
2	Thin films
2	Wafer bonding
2	X radiation
2	X-ray photoelectron spectra
1	Ab initio calculations
1	Acoustic materials
1	Acoustic wave velocity
1	Acoustic waves
1	Aluminium compounds
1	Amorphous semiconductors
1	Band structure
1	Biaxial strain
1	Blende structure
1	Bragg reflection
1	CVD
1	Charge carrier injection
1	Chemical composition
1	Cluster
1	Continuous wave
1	Coverage rate
1	Critical value
1	Crystal orientation
1	Crystal structure
1	Density functional method
1	Depth profiles
1	Dielectric materials
1	Diffusion

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