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Serveur d'exploration sur l'Indium - Analysis (France)

Index « Auteurs » - entrée « O. Briot »
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O. Brinza < O. Briot < O. Bunk  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 19.
Ident.Authors (with country if any)Title
000082 (2012) Unintentional incorporation of H and related structural and free-electron properties of c- and a-plane InN : Indium Nitride and Related Alloys
000115 (2012) Investigation of indium nitride for micro-nanotechnology
000219 (2011) Free electron properties and hydrogen in )nN grown by MOVPE : Growth of Group III Nitrides
000411 (2009) Optical, structural investigations and band-gap bowing parameter of GaInN alloys
000420 (2009) Metal organic vapour phase epitaxial growth of indium-rich InGaN alloys with robust photoluminescence properties
000421 (2009) MOVPE growth of InN buffer layers on sapphire
000438 (2009) InN excitonic deformation potentials determined experimentally
000452 (2009) Growth of InN films and nanostructures by MOVPE
000474 (2009) Alternative precursors for MOVPE growth of InN and GaN at low temperature
000760 (2006) Superconductivity of InN with a well defined Fermi surface
000876 (2005) Terahertz investigation of high quality indium nitride epitaxial layers
000896 (2005) Raman scattering by the longitudinal optical phonon in InN : Wave-vector nonconserving mechanisms
000A89 (2004) Raman scattering in hexagonal InN under high pressure
000B71 (2004) Comment on: Mie resonances, infrared emission, and the band gap of InN. Authors' reply
000B92 (2004) Absorption and Raman scattering processes in InN films and dots
000C00 (2003-12-15) Raman scattering in large single indium nitride dots: Correlation between morphology and strain
000C14 (2003-10-06) Indium nitride quantum dots grown by metalorganic vapor phase epitaxy
001D76 (1996-07-15) Coupled LO-plasmon modes in semi-insulating GaAs of ZnSe/GaAs heterojunctions
002199 (1995) Critical layer thickness in MOCVD grown InGaAs-GaAs strained quantum wells

List of associated KwdEn.i

Nombre de
documents		Descripteur
9III-V semiconductors
8Indium nitride
8MOCVD
8MOVPE method
7Photoluminescence
7Semiconductor materials
6Indium nitrides
6Thin films
5Carrier density
5Experimental study
5III-V compound
5VPE
4Epitaxial layers
4Gallium nitride
4Growth mechanism
4Raman spectra
3Atomic force microscopy
3Doping
3Energy gap
3Inorganic compounds
3Optical properties
3Phonons
2Ammonia
2Binary compounds
2Buffer layer
2CVD
2Dielectric function
2Fluctuations
2Free electron
2Hydrogen additions
2Indium compounds
2Magnetic field effects
2Molecular beam epitaxy
2Optical phonons
2Semiconductor quantum dots
2Ternary compounds
2Thermal annealing
1Absorption spectra
1Activation energy
1Adatoms
1Carbon
1Carrier lifetime
1Charge density
1Columnar structure
1Crystal chemistry
1Crystal faces
1Crystal perfection
1Crystal structure
1Cyclotron resonance
1Damage
1Defect density
1Deformation potential
1Depth profiles
1Dimensionality
1Dislocation density
1Dislocations
1Droplets
1Electronic properties
1Fermi surface
1Frequency dependence
1Gallium Nitrides
1Gallium arsenides
1Grain size
1Growth rate
1Grueneisen constant
1Halides
1Heterostructures
1Hexagonal crystals
1High pressure
1Hydrostatic pressure
1Hysteresis
1Impurities
1Impurity density
1Indium
1Indium Nitrides
1Indium arsenides
1Inelastic scattering
1Infrared radiation
1Interfaces
1Internal stresses
1Island structure
1Lateral growth
1Light scattering
1Line shape
1Line widths
1Magnetoresistance
1Microstructure
1Mie scattering
1Momentum density
1Nanostructures
1Nanotechnology
1Nitridation
1Non contact measurement
1Non radiative recombination
1Operating conditions
1Optical characteristic
1Optical method
1Organic hydrazine
1Phase transformations
1Phonon mode

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