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Serveur d'exploration sur l'Indium - Analysis (France)

Index « Auteurs » - entrée « N. T. Pelekanos »
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N. T. Moshegov < N. T. Pelekanos < N. Tabet  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 7.
Ident.Authors (with country if any)Title
000600 (2008) Anti-binding of biexcitons in (21 1)B InAs/GaAs piezoelectric quantum dots
000932 (2005) Micro-raman characterization of InxGa1-xN/GaN/Al2O3 heterostructures
000C17 (2003-08-18) Tunable laser diodes by Stark effect
000D12 (2003) Plasma-assisted MBE growth of quaternary InAlGaN quantum well heterostructures with room temperature luminescence
000E37 (2002-08-26) Widely tunable light-emitting diodes by Stark effect in forward bias
001340 (2000-03-20) Self-assembled InGaN quantum dots grown by molecular-beam epitaxy
002178 (1995) Fast photorefractive materials using quantum wells

List of associated KwdEn.i

Nombre de
documents		Descripteur
5Experimental study
4III-V semiconductors
3Gallium arsenides
3Indium compounds
3Molecular beam epitaxy
3Photoluminescence
2Aluminium compounds
2Chemical composition
2Gallium nitrides
2Indium arsenides
2Indium nitrides
2Quantum confined Stark effect
2Quantum wells
2Semiconductor lasers
1Aluminium nitrides
1Atomic force microscopy
1Band structure
1Biexcitons
1Binary compounds
1Binding energy
1Crystal growth from vapors
1Crystal perfection
1Electroluminescence
1Excitons
1Fabrication property relation
1Fabrication structure relation
1Gallium compounds
1Heterostructures
1High field
1High-frequency discharges
1Image processing
1Island structure
1Laser tuning
1Light emitting diodes
1Nonlinear optics
1Operating mode
1Optical pumping
1Photorefractive effect
1Plasma sources
1Quantum dots
1Quantum well devices
1Raman spectra
1Red shift
1Roughness
1Semiconductor growth
1Semiconductor quantum dots
1Semiconductor quantum wells
1Solid solutions
1Surfaces
1Thin films
1Tunnel effect
1Wide band gap semiconductors
1p i n diodes
1self-assembly

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HfdIndexSelect -h $EXPLOR_AREA/Data/France/Analysis/Author.i  \
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