Serveur d'exploration sur l'Indium - Analysis (France)

Index « Auteurs » - entrée « N. J. Mason »
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N. Issautier < N. J. Mason < N. J. Pulsford  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 12.
Ident.Authors (with country if any)Title
000846 (2006) Current-driven breakdown of the quantized Hall states of a broken-gap 2D electron-hole system
000B59 (2004) Effects of electron-hole hybridization on cyclotron resonance in InAs/GaSb heterostructures
000C02 (2003-12-15) Insulating states of a broken-gap two-dimensional electron-hole system
000E93 (2002) X-ray scattering from epitaxial GaSb/InAs thin films below and above the critical thickness
001263 (2001) Edge effects in an insulating state of an electron-hole system in magnetic field
001278 (2001) Breakdown of the quantum Hall effect in an electron-hole system
001317 (2000-09-11) Metal-Insulator Oscillations in a Two-Dimensional Electron-Hole System
001829 (1998-09-15) Magnetic breakdown in the semimetallic InAs/GaSb system
001C70 (1997) Growth of InAs/GaSb strained layer superlattices by MOVPE. III. Use of UV absorption to monitor alkyl stability in the reactor
001E09 (1996-04-15) Zero-Hall-resistance state in a semimetallic InAs/GaSb superlattice
002874 (1992) InGaSb/GaSb photodiodes growth by MOVPE
002A18 (1991) Improvement of the crystalline, optical and electrical quality of MOVPE GaInSb layers

List of associated KwdEn.i

Nombre de
documents
Descripteur
8Experimental study
6Gallium antimonides
6Indium arsenides
6Semiconductor materials
4Electron hole pair
3Binary compounds
3Gallium compounds
3Indium compounds
3Landau levels
3Quantum Hall effect
2Activation energy
2Carrier density
2Energy gap
2Epitaxy
2Gallium Indium Antimonides Mixed
2Growth from vapor
2III-V semiconductors
2Inorganic compound
2Interface states
2MOVPE method
2Magnetic field effects
2Magnetoresistance
2Organometallic compound
2Precursor
2Thickness
2Thin films
2Two-dimensional electron gas
1Antimony compounds
1Arsenic compounds
1Atmospheric pressure
1Atomic force microscopy
1Bragg reflection
1Buffer layer
1Characterization
1Charge carrier concentration
1Charge carrier mobility
1Charge carriers
1Conduction bands
1Controlled atmosphere
1Critical current density
1Critical field
1Crystal defects
1Crystal growth
1Crystal growth from vapors
1Cyclotron resonance
1Diffuse scattering
1Dislocations
1Doping
1Edge effect
1Effective mass
1Electrical properties
1Epitaxial layers
1Fermi level
1Fermi surface
1Fluctuations
1Gallium Antimonides
1Hall effect
1Heterojunction
1Heterostructures
1High field
1Hole density
1Hybridization
1Interband transitions
1Lamellar structure
1Lattice parameters
1Level anticrossing
1Magnetic breakdown
1Magnetic fields
1Metal-insulator transition
1Mismatch lattice
1Modelling
1Monocrystals
1Non destructive method
1Optical properties
1Photodiode
1Pressure
1Process control
1Raman scattering
1Roughness
1Secondary ion mass spectrometry
1Semiconductor heterojunctions
1Semiconductor superlattices
1Shubnikov-de Haas effect
1Stability
1Stresses
1Superlattices
1Support
1Temperature dependence
1Thin film
1Two-dimensional systems
1Ultraviolet absorption
1X ray diffraction
1X-ray scattering
1two-dimensional hole gas

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