Serveur d'exploration sur l'Indium - Analysis (France)

Index « Auteurs » - entrée « N. Grandjean »
Attention, ce site est en cours de développement !
Attention, site généré par des moyens informatiques à partir de corpus bruts.
Les informations ne sont donc pas validées.
N. Gogneau < N. Grandjean < N. Gross  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 63.
[0-20] [0 - 20][0 - 50][20-40]
Ident.Authors (with country if any)Title
000205 (2011) Investigation of the In composition in InGaN/GaN quantum wells deposited by MOVPE and/or MBE with emission from violet to green : Novel Gain Materials Based on III-V-N Compounds
000651 (2007) Nitride-based heterostructures grown by MOCVD for near-and mid-infrared intersubband transitions
000705 (2007) Current status of AlInN layers lattice-matched to GaN for photonics and electronics
000B69 (2004) Comparison of the In distribution in InGaN/GaN quantum well structures grown by molecular beam epitaxy and metalorganic vapor phase epitaxy
000D55 (2003) In surface segregation in InGaN/GaN quantum wells
000D98 (2003) Cathodoluminescence study of the excitons localization in AlGaN/GaN and InGaN/GaN quantum wells grown on sapphire
000E82 (2002-01-21) Large size dependence of exciton-longitudinal-optical-phonon coupling in nitride-based quantum wells and quantum boxes
000E99 (2002) The effects of localization and of electric fields on LO-phonon-exciton coupling in InGaN/GaN quantum wells and quantum boxes
000F21 (2002) Steady-state and time-resolved near-field optical spectroscopy of GaN/AlN quantum dots and InGaN/GaN quantum wells
000F53 (2002) Optical investigations and absorption coefficient determination of InGaN/GaN quantum wells
001000 (2002) In K-edge extended X-ray absorption fine structure of InGaN epilayers and quantum boxes
001078 (2001-09-15) Influence of pressure on the optical properties of InxGa1-xN epilayers and quantum structures
001114 (2001-03-12) Effects of GaAlN barriers and of dimensionality on optical recombination processes in InGaN quantum wells and quantum boxes
001115 (2001-02-26) High internal electric field in a graded-width InGaN/GaN quantum well: Accurate determination by time-resolved photoluminescence spectroscopy
001175 (2001) Photoluminescence excitation spectroscopy of MBE grown InGaN quantum wells and quantum boxes
001178 (2001) Photoconductance measurements and Stokes shift in InGaN alloys
001185 (2001) Optoelectronic characterization of blue InGaN/GaN LEDs grown by MBE
001187 (2001) Optical properties of self-assembled InGaN/GaN quantum dots
001201 (2001) Modelling of absorption and emission spectra of InxGa1-xN layers grown by MBE
001230 (2001) InGaN/GaN quantum wells grown by molecular beam epitaxy emitting at 300 K in the whole visible spectrum
001231 (2001) InGaN heterostructures grown by molecular beam epitaxy : from growth mechanism to optical properties

List of associated KwdEn.i

Nombre de
documents
Descripteur
54Experimental study
40Photoluminescence
35Molecular beam epitaxy
33Ternary compounds
31Semiconductor materials
26Quantum wells
25Binary compounds
23Gallium nitrides
23III-V semiconductors
22Gallium arsenides
22Indium nitrides
21Indium arsenides
13Indium compounds
12Gallium compounds
10Quantum dots
9Semiconductor quantum wells
8Crystal growth from vapors
8Excitons
8Growth mechanism
8Thickness
6Crystal growth
6Island structure
6Line widths
6Segregation
6Surface segregation
6Thin films
6Wide band gap semiconductors
5Absorption spectra
5Aluminium nitrides
5Heterojunctions
5Heterostructures
5RHEED
5Semiconductor growth
5Stokes shift
5Strained layer
5Stress relaxation
5Theoretical study
5Time resolved spectra
4Charge carriers
4Semiconductor epitaxial layers
4Semiconductor quantum dots
4Temperature dependence
3Chemical composition
3Electric field effects
3Electron localization
3Energy gap
3Energy-level transitions
3Epitaxy
3Excitation spectrum
3Film growth
3Heteroepitaxy
3Light emitting diodes
3Luminescence
3MOCVD
3Microstructure
3Multiple quantum well
3Optical properties
3Spectral shift
3Stark effect
3Strains
3Stresses
3Surfactant
3Thin film
3Transmission electron microscopy
2Arsenic compounds
2Atomic layer method
2Binding energy
2Blue shift
2Chemical beam epitaxy
2Critical size
2Diffusion length
2Electroluminescence
2Electron hole pair
2Electronic structure
2Envelope function
2Epitaxial layers
2Fluctuations
2Gallium Indium Arsenides Mixed
2Growth rate
2III-V compound
2Indium nitride
2Inorganic compound
2Inorganic compounds
2Lattice parameters
2MOVPE method
2Mismatch lattice
2Modelling
2Molecular beam condensation
2Monte Carlo method
2Morphology
2Multilayers
2Optical pumping
2Oscillator strengths
2Photoconductivity
2Quantum effect
2Radiative recombination
2Recombination
2Reflection high energy electron diffraction
2Spin flip
2Subband

Pour manipuler ce document sous Unix (Dilib)

EXPLOR_STEP=IndiumV3/Data/France/Analysis
HfdIndexSelect -h $EXPLOR_AREA/Data/France/Analysis/Author.i -k "N. Grandjean" 
HfdIndexSelect -h $EXPLOR_AREA/Data/France/Analysis/Author.i  \
                -Sk "N. Grandjean" \
         | HfdSelect -Kh $EXPLOR_AREA/Data/France/Analysis/biblio.hfd 

Pour mettre un lien sur cette page dans le réseau Wicri

{{Explor lien
   |wiki=   *** parameter Area/wikiCode missing *** 
   |area=    IndiumV3
   |flux=    France
   |étape=   Analysis
   |type=    indexItem
   |index=    Author.i
   |clé=    N. Grandjean
}}

Wicri

This area was generated with Dilib version V0.5.77.
Data generation: Mon Jun 9 10:27:54 2014. Site generation: Thu Mar 7 16:19:59 2024