N. Berrouachedi < N. Bertru < N. Bodereau

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 29.
[0-20] [0 - 20][0 - 29][20-28][20-40]

Ident.	Authors (with country if any)	Title
000274 (2010)		QD laser on InP substrate for 1.55 μm emission and beyond
000467 (2009)		Critical thickness for InAs quantum dot formation on (311)B InP substrates
000738 (2006)		Structures à îlots quantiques sur substrat InP(100) pour l'émission dans le moyen infrarouge (2-5μm)
000780 (2006)		Self-assembled InAs quantum dots grown on InP (311)B substrates : Role of buffer layer and amount of InAs deposited
000929 (2005)		Molecular beam epitaxy growth of quantum dot lasers emitting around 1.5μm on InP(311)B substrates
000976 (2005)		Emission wavelength control of InAs quantum dots in a GaInAsP matrix grown on InP(3 1 1)B substrates
000A08 (2005)		Comparison of InAs quantum dot lasers emitting at 1.55 μm under optical and electrical injection
000A42 (2004-03-15)		Electron-acoustic phonon interaction in a single quantum dots layer: Acoustic mirror and cavity effects
000D61 (2003)		Growth and optical characterizations of InAs quantum dots on InP substrate: towards a 1.55 μm quantum dot laser
000D65 (2003)		Formation of InAs islands on InP(3 11)B surface by molecular beam epitaxy
000F28 (2002)		Room temperature laser emission of 1.5 μm from InAs/InP(311)B quantum dots
000F50 (2002)		Optical spectroscopy and modelling of double-cap grown InAs/InP quantum dots with long wavelength emission
001013 (2002)		Formation of 3D InAs quantum dots on InP substrate
001018 (2002)		Experimental and theoretical studies of electronic energy levels in InAs quantum dots grown on (001) and (113)B InP substrates
001099 (2001-05-14)		Wetting layer carrier dynamics in InAs/InP quantum dots
001109 (2001-03-19)		Height dispersion control of InAs/InP quantum dots emitting at 1.55 μm
001338 (2000-04-15)		Acoustic-phonon Raman scattering in InAs/InP self-assembled quantum dots
001419 (2000)		Monolayer coverage effects on size and ordering of self-organized InAs islands grown on (1 13)B InP substrates
001568 (1999-05-31)		Wavelength tuning of InAs quantum dots grown on (311)B InP
001586 (1999-03-22)		Formation of low-index facets in Ga0.2In0.8As and InAs islands on a InP(113)B substrate
001593 (1999-02-01)		Spontaneous emission from InAs/GaSb quantum wells grown by molecular beam epitaxy

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List of associated KwdEn.i

Nombre de documents	Descripteur
20	Experimental study
17	Indium arsenides
16	III-V semiconductors
12	Photoluminescence
12	Quantum dots
11	Molecular beam epitaxy
8	Binary compounds
8	Crystal growth from vapors
8	Indium compounds
7	Semiconductor materials
6	GSMBE method
6	Semiconductor quantum dots
5	Atomic force microscopy
5	Gallium arsenides
5	Heterojunctions
5	Indium phosphides
5	Island structure
5	Nanostructured materials
5	Semiconductor lasers
4	Quantum well lasers
4	Semiconductor growth
3	Buffer layer
3	Chemical beam epitaxy
3	Density
3	Quantum dot lasers
3	Stacking sequence
3	Substrates
3	TEM
2	Ambient temperature
2	Crystal orientation
2	Dimensions
2	Electron-phonon interactions
2	Emission spectra
2	Energy gap
2	Excited states
2	Gallium compounds
2	Gallium phosphides
2	Growth mechanism
2	III-V compound
2	Mismatch lattice
2	Modelling
2	Nanostructures
2	Operating mode
2	RHEED
2	Raman spectra
2	Self-assembly
2	Semiconductor epitaxial layers
2	Temperature dependence
2	Ternary compounds
2	Threshold current
2	Time resolved spectra
1	AES
1	Acoustic materials
1	Acoustic wave velocity
1	Acoustic waves
1	Aluminium antimonides
1	Annealing
1	Binary compound
1	CVD
1	Calibration
1	Carrier mean free path
1	Charge carrier injection
1	Chemical etching
1	Cluster
1	Coatings
1	Compressive stress
1	Continuous wave
1	Coverage rate
1	Critical value
1	Crystal growth
1	Crystal structure
1	Current density
1	Desorption
1	Diffusion
1	Dispersion relations
1	Distributed Bragg reflector (DBR) lasers
1	Doping
1	Double layers
1	Elasticity
1	Electroluminescence
1	Electromagnetic wave diffraction
1	Electronic structure
1	Energy-level transitions
1	Epitaxial layers
1	Epitaxy
1	Excitation spectrum
1	Gallium Antimonides
1	Gallium antimonides
1	Ground states
1	Indium Antimonides
1	Indium Arsenides
1	Indium Phosphides
1	Indium antimonides
1	Indium phosphide
1	Injection lasers
1	Inorganic compounds
1	Intensity modulation
1	Interface states
1	Ion beam mixing
1	Laser diodes

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