M. Zahzouh < M. Zaknoune < M. Zarcone

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 23.
[0-20] [0 - 20][0 - 23][20-22][20-40]

Ident.	Authors (with country if any)	Title
000143 (2012)		480-GHz fmax in InP/GaAsSb/InP DHBT With New Base Isolation μ-Airbridge Design
000666 (2007)		MBE growth of heavily carbon doped GaAsSb on InP for heterojunction bipolar transistor applications
000827 (2006)		Free-carrier absorption and growth temperature of highly Be-doped InGaAs in molecular beam epitaxy
000954 (2005)		High performances of InP channel power HEMT at 94 GHz
000A13 (2005)		CBr4 and be heavily doped InGaAs grown in a production MBE system
000A22 (2005)		94 GHz high power performances of InAs0,4P0.6 channel HEMTs on InP
000B78 (2004)		Boundary conditions for realistic simulation of ultra short pseudomorphic high electron mobility transistor on indium phosphide substrates
000D34 (2003)		Metamorphic InAlAs/InGaAs HEMTs: Material properties and device performance
000E11 (2003)		60-GHz High Power Performance In0.35Al0.65As-In 0.35Ga 0.65As Metamorphic HEMTs on GaAs
000E58 (2002-06-03)		Electron lifetime of heavily Be-doped In0.53Ga0.47As as a function of growth temperature and doping density
000E91 (2002)		fmax of 490 GHz metamorphic In0.52Al0.48As/In0.53Ga 0.47As HEMTs on GaAs substrate
001059 (2001-12-01)		Stacking of metamorphic InAlAs/InGaAs heterostructures on GaAs substrate
001431 (2000)		Indium content in metamorphic InxAl1-xAs/InxGa1-xAs HEMTs on GaAs substrate: A new structure parameter
001494 (2000)		0.1-μm high performance double heterojunction In0.32Al0.68As/In0.33Ga0.67As metamorphic HEMTs on GaAs
001624 (1999)		HEMTS métamorphiques à hétérojonction InxAl1-xAs/InxGa1-xAs sur substrat gaas : Influence du taux d'indium x
001700 (1999)		Metamorphic In0.4Al0.6As/In0.4Ga0.6As HEMT's on GaAs substrate
001715 (1999)		Influence on power performances at 60 GHz of indium composition in metamorphic HEMTs
001726 (1999)		High-power V-band Ga0.51In0.49P/In0.2Ga0.8As pseudomorphic HEMT grown by gas source molecular beam epitaxy
001786 (1999)		0.1μm Ga0.51In0.49P/In0.2Ga0.8As PHEMT grown by GSMBE with high DC and RF performances
001787 (1999)		0.1 μm high performance metamorphic In0.32Al0.68As/In0.33Ga0.67As HEMT on GaAs using inverse step InAlAs buffer
001788 (1999)		0.1 μm (Al0.5Ga0.5)0.5In0.5P/In0.2Ga0.8As/GaAs PHEMT grown by gas source molecular beam epitaxy

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List of associated KwdEn.i

Nombre de documents	Descripteur
12	High electron mobility transistors
9	Current density
9	Molecular beam epitaxy
8	Experiments
7	Experimental study
7	Gallium arsenides
7	III-V semiconductors
7	Transconductance
6	Heterojunctions
6	Semiconducting indium gallium arsenide
5	Semiconductor doping
5	Ternary compound
5	Theory
4	Electron transport properties
4	High electron mobility transistor
4	Indium arsenides
4	Indium compounds
4	Power gain
4	Semiconducting gallium arsenide
4	Substrates
3	Crystal growth from vapors
3	Doping
3	Indium aluminum arsenide
3	Indium phosphide
3	Ohmic contacts
3	Performance evaluation
3	Semiconductor growth
2	Aluminium compounds
2	Binary compound
2	Bipolar transistors
2	Carbon additions
2	Carrier concentration
2	Carrier mobility
2	Composite material
2	Composition effects
2	Current gain
2	Diffusion
2	Dislocations (crystals)
2	Drain voltage
2	Electric power measurement
2	Electron mobility
2	Etching
2	GSMBE method
2	Heterojunction bipolar transistors
2	High performance
2	III-V compound
2	Optimization
2	Output power
2	Semiconducting indium compounds
2	Semiconductor device manufacture
2	Semiconductor device structures
2	Solid source molecular beam epitaxy
2	Temperature dependence
1	Absorption spectrum
1	Aluminium arsenides
1	Aluminum
1	Anomaly
1	Atomic force microscopy
1	Auger effect
1	Background noise
1	Base collector junction
1	Beryllium
1	Beryllium addition
1	Beryllium additions
1	Bipolar transistor
1	Boundary conditions
1	Buffer layer
1	Capacitance
1	Carrier lifetime
1	Chemical vapor deposition
1	Common emitter
1	Composition effect
1	Computer simulation
1	Current voltage characteristics
1	Cut off frequency
1	Defect states
1	Dirichlet conditions
1	Dislocations
1	Disruptive voltage
1	Double heterojunction metamorphic high electron mobility transistors
1	Electric breakdown
1	Electric breakdown of solids
1	Electric currents
1	Electric potential
1	Electrical characteristic
1	Electron beams
1	Epilayers
1	Epitaxy
1	Equivalent circuits
1	Extrinsic transconductance
1	Field effect transistor
1	Free carrier
1	Frequencies
1	Frequency characteristic
1	Gallium Arsenides
1	Gallium Phosphides
1	Gallium antimonides
1	Gallium compounds
1	Gas source molecular beam epitaxy
1	Gate current

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