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Index « Auteurs » - entrée « M. Voos »
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M. Volz < M. Voos < M. W. Lee  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 12.
Ident.Authors (with country if any)Title
001C17 (1997) Relaxation of microcavity polariton
002241 (1994-10-24) High-efficiency energy up-conversion by an ''Auger fountain'' at an InP-AlInAs type-II heterojunction
002832 (1992) Observation of laser emission in an InP-AlInAs type II superlattice
002856 (1992) Investigations of MOCVD-grown AllnAs-InP type II heterostructures
002B25 (1990) Optical properties of As-etched and regrown InP/InGaAs quantum wires and dots
002B26 (1990) Optical investigations of the band offsets in an InGaAs-InGaAsP-InP double-step heterostructure
002B27 (1990) Optical investigation of the band offsets in an InGaAs-InGaAsP-InP double-step quantum well
002B66 (1990) Enhancement of intrinsic photoluminescence due to lateral confinement in InP/InGaAs quantum wires and dots
002D41 (1988) Some properties of semiconductor superlattices
002D77 (1988) Investigations of the quantum photovoltaic effect in InAs-GaSb semiconductor superlattices
002F99 (1986) Quantum Hall effect in In0.53Ga0.47As-InP heterojunctions with two populated electric subbands
003010 (1986) Luminescence investigations of highly strained-layer InAs-GaAs superlattices

List of associated KwdEn.i

Nombre de
documents		Descripteur
8Photoluminescence
8Semiconductor materials
7Experimental study
7Indium Phosphides
6Inorganic compound
5Gallium Indium Arsenides Mixed
5Superlattice
4Heterojunction
3Band structure
3Indium Arsenides
3Infrared absorption
3Quantum well
2Aluminium Indium Arsenides Mixed
2Excitation spectrum
2Gallium Antimonides
2Gallium Arsenides
2Gallium Indium Arsenides phosphides Mixed
2Indium arsenides
2Infrared radiation
2Quantum dot
2Quantum wire
1Absorptance
1Aluminium Gallium Arsenides Mixed
1Aluminium arsenides
1Angular variation
1Auger effect
1Band offset
1Binary compounds
1Cadmium Tellurides
1Cavities
1Charge carrier
1Chemical vapor deposition
1Confinement
1Deformation
1Dispersion relations
1Electron beam lithography
1Electron hole pair
1Electronic structure
1Emission spectra
1Energy level population
1Excited states
1Gallium arsenides
1Ground state
1Heterojunctions
1Indium phosphides
1Ion beam
1Low temperature
1Luminescence decay
1Magnetooptical properties
1Mercury Tellurides
1Nonlinear optics
1Optical microcavity
1Optical transition
1Optoelectronic device
1Organometallic compound
1Photovoltaic effect
1Polaritons
1Quantum Hall effect
1Quantum effect
1Recombination
1Relaxation
1Resonant states
1Review
1Semiconductor laser
1Shubnikov de Haas effect
1Sputtering
1Surface layer
1Temperature
1Ternary compounds
1Time resolution
1Tuning
1Very low temperature
1Wave function

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