Serveur d'exploration sur l'Indium - Analysis (France)

Index « Auteurs » - entrée « M. Salvi »
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M. Said < M. Salvi < M. Samouel  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 11.
Ident.Authors (with country if any)Title
002978 (1991) Spatial investigation of an iron-doped indium phosphide ingot
002B08 (1990) Spatial distribution of donors in silicon implanted iron and iron-gallium doped semi-insulating indium phosphide
002B81 (1990) Determination of H,C,N, and O in indium phosphide by secondary-ion mass spectrometry
002B93 (1990) Angle resolved X-ray photoemission study of rapid thermal annealing applied to different GaAs and InP samples
002C48 (1989) Oxygen complexes in III-V compounds as determined by secondary-ion mass spectrometry under cesium bombardment
002D47 (1988) Schottky and field-effect transistor fabrication on InP and GalnAs
002E07 (1988) Erbium implanted in III-V materials
002E26 (1988) Behaviour of erbium implanted in InP
002E98 (1987) Photoluminescence studies of Mg and Hg implanted Ga0,47In0,53As
002F01 (1987) Nondiffusion and 1•54 μm luminescence of erbium implanted in InP
003065 (1985) Shallow p+ layers in In0.53Ga0.47As by Hg implantation

List of associated KwdEn.i

Nombre de
documents
Descripteur
6Ion implantation
5Experimental study
5Indium Phosphides
5Inorganic compound
5Semiconductor materials
4Gallium Indium Arsenides Mixed
4Impurity
4Photoluminescence
3Erbium
3Gallium Arsenides
2Acceptor center
2Concentration distribution
2III-V compound
2Magnesium
2Mercury
2Secondary ion mass spectrometry
2Temperature
2Thin film
1Aluminium Gallium Arsenides Mixed
1Amorphization
1Angle
1Annealing
1Barrier height
1Beryllium
1Carbon
1Chemical vapor deposition
1Compounded structure
1Crystal growth
1Czochralski method
1Detection limit
1Doping
1Energy gap
1Epitaxy
1Field effect transistor
1Gallium Indium Arsenides phosphides Mixed
1Heat treatment
1Heteroepitaxy
1Hydrogen
1Impurity distribution
1Impurity ionization
1Ionization potential
1Junction
1Light emitting device
1Measurement
1Metal semiconductor field effect transistor
1Nitrogen
1Oxygen
1P+ n junction
1Semiconductor device
1Shallow impurities
1Substrate
1Surface treatment
1Thermal annealing
1Time
1Wafer
1X ray

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