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Serveur d'exploration sur l'Indium - Analysis (France)

Index « Auteurs » - entrée « M. Sacilotti »
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M. Sabra < M. Sacilotti < M. Saglam  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 9.
Ident.Authors (with country if any)Title
000A74 (2004) Structural studies of nano/micrometric semiconducting GaInP wires grown by MOCVD
001921 (1998) Temperature dependence of AlInAs band gap energy and AlInAs/InP band offsets
002136 (1995) Photoluminescence and band offsets of AlInAs/InP
002592 (1993) Optical studies of InP/InAlAs/InP interface recombinations
002599 (1993) Optical characterization of InP/InAlAs/InP interfaces grown by MOVPE
002743 (1993) A new organoindium precursor for electronic materials
002893 (1992) Growth and characterization of type-II/type-I AlGaInAs/InP interfaces
002A50 (1991) Effect of metal-organic composition fluctuation on the atmospheric-pressure metal-organic vapor phase epitaxy growth of GaAlAs/GaAs and GaInAs/InP structures
003107 (1984) Metalorganic InP and InxGa1-xAsyP1-y on InP epitaxy at atmospheric pressure

List of associated KwdEn.i

Nombre de
documents		Descripteur
6Experimental study
6Indium Phosphides
5Epitaxy
5Organometallic compound
5Photoluminescence
5Semiconductor materials
4Inorganic compound
4Thin film
3Crystal growth
3Growth from vapor
3Indium phosphides
3Ternary compounds
2Aluminium Indium Arsenides Mixed
2Aluminium arsenides
2Atmospheric pressure
2Auger electron spectrometry
2Band offset
2Binary compounds
2Heterojunction
2Self consistency
2Solid-solid interfaces
1Acceptor center
1Acceptors
1Aluminium Gallium Arsenides Mixed
1Aluminium Gallium Indium Arsenides Mixed
1Aluminium Indium Arsenides
1Band structure
1Binding energy
1CVD
1Chemical vapor deposition
1Crystal growth from vapors
1Electron microscopy
1Energy band
1Energy gap
1Energy-level splitting
1Gallium Arsenides
1Gallium Indium Arsenides Mixed
1Gallium Indium Arsenides phosphides Mixed
1Gallium phosphides
1Gap
1Hall effect
1III-V semiconductors
1Impurities
1Impurity states
1Indium arsenides
1Interface
1Interface electron state
1Laser beam
1Localized states
1Low temperature
1MOCVD
1Mismatch lattice
1Monocrystals
1Multiple layer
1Nanostructured materials
1Nanowires
1Optical properties
1Optoelectronic device
1Poisson equation
1Precursor
1S shape
1Scanning electron microscopy
1Schroedinger equation
1Solid solid interface
1Temperature dependence
1Thermodynamic model
1Transmission electron microscopy
1VLS growth
1Vapor pressure

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HfdIndexSelect -h $EXPLOR_AREA/Data/France/Analysis/Author.i  \
                -Sk "M. Sacilotti" \
         | HfdSelect -Kh $EXPLOR_AREA/Data/France/Analysis/biblio.hfd

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