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Serveur d'exploration sur l'Indium - Analysis (France)

Index « Auteurs » - entrée « M. Renaud »
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M. Remy < M. Renaud < M. Renteria  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 20.
Ident.Authors (with country if any)Title
000F52 (2002) Optical packet switching with lossless 16-channel InP monolithically integrated wavelength selector module
001A05 (1998) Four-channel wavelength selector monolithically integrated on InP
002384 (1994) Low-loss fiber-chip coupling by InGaAsP/InP thick waveguides for guided-wave photonic integrated circuits
002452 (1994) 16channel phased array wavelength demultiplexer on InP with low polarisation sensitivity
002649 (1993) InP digital optical swithc: key element for guided-wave photonic switching
002696 (1993) Electrical and optical characterization of semi-insulating GaxIn1-xAsyP1-y/InP grown by gas source molecular beam epitaxy
002843 (1992) Monolithic integration of GaInAsP/InP carrier depletion directional couplers and GaInAs p-i-n detectors on semi-insulating InP
002852 (1992) Low driving voltage or current digital optical switch on InP for multiwavelength system applications
002873 (1992) InP/GaInAsP guided-wave phase modulators based on carrier-induced effects : theory and experiment
002933 (1992) Accurate determination of waveguide-fed p-i-n photodiode absorption
002958 (1991) Wafer and epilayer improvement for integrated optics devices on InP: the ESPRIT project 2518
002995 (1991) Optical circuits and integrated detectors
002A31 (1991) First digital optical switch based on InP/GaInAsP double heterostructure waveguides
002A61 (1991) Correlation between electrical and structural characterization of In0.5.Ga0.47As/Si3N4 interfaces on MIS structures
002B07 (1990) Spatially-resolved photoluminescence study of InP : Fe substrates from different suppliers
002B43 (1990) Integration of detectors with GaInAsP/InP carrier depletion optical switches
002C84 (1989) Characterization of Fe-doped semi-insulating InP by low temperature and room temperature spatially resolved photoluminescence
002D56 (1988) Physical parameters of GaInAs/Si3N4 interface states obtained by the conductance method
002D98 (1988) Ga0.47In0.53As depletion mode MISFETs with negligible drain current drift
002E84 (1987) Spatially resolved ellipsometry for semiconductor process control: applicatin to GaInAs MIS structures

List of associated KwdEn.i

Nombre de
documents		Descripteur
12Indium Phosphides
8Experimental study
8Gallium Indium Arsenides Mixed
6Integrated optics
5Gallium Indium Arsenides phosphides Mixed
5Optical switch
4Electrical conductivity
4Optical waveguide
4Semiconductor materials
3Directional coupler
3Inorganic compound
3Manufacturing
3Photodetector
3Wavelength division multiplexing
3p i n diode
2Binary compound
2Characterization
2Communication channels (information theory)
2Cross section
2Digital switching
2Electrical characteristic
2Field effect transistor
2III-V compound
2Impurity density
2MIS structure
2Monolithic integrated circuits
2Optical coupler
2Optical properties
2Performance characteristic
2Phase modulation
2Photoluminescence
2Quaternary compound
2Semiconducting indium phosphide
2Semiconductor device
2Silicon Nitrides
2Theoretical study
2Theory
2Voltage current curve
2Waveguide
2Waveguide junction
2Y shape
1Absorption
1Amorphization crystallization
1Arsenic Phosphides
1Bit error rate
1Capacitance
1Circuit design
1Circuit theory
1Computer simulation
1Correlation
1Coupling coefficient
1Crosstalk
1Crystal growth
1Current distribution
1Current drift
1Current-optical power characteristic
1Czochralski method
1Demultiplexer
1Density of states
1Depletion
1Depletion mode
1Detector
1Diffraction grating
1Digital switch
1Dislocation
1Dislocation density
1Doping
1Double heterojunction
1Drift
1Electron capture
1Ellipsometry
1Epitaxial film
1Experiments
1Fiber
1Fiber optic networks
1Fiber-to-fiber insertion loss
1Four-channel wavelength selectors
1Frequency response
1Gallium Arsenides
1Gallium Indium Phosphides Arsenides Mixed
1Gallium Phosphides
1Gas emission
1Guided wave
1High resolution
1Instrumentation
1Insulating material
1Integrated circuit
1Interface
1Interface electron state
1Iron
1Layout
1Light amplifiers
1Light transmission
1Liquid encapsulation
1Low temperature
1MIS transistor
1Manufacturing process
1Measurement
1Molecular beam condensation
1Monolithic integrated circuit

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