M. Ravetto < M. Razeghi < M. Regragui

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 58.
[0-20] [0 - 20][0 - 50][20-40]

Ident.	Authors (with country if any)	Title
002638 (1993)		Intermixing of GaInP/GaAs multiple quantum wells
002886 (1992)		High power, 0.98 μm, Ga0.8As/GaAs/Ga0.51In0.49P multiple quantum well laser
002952 (1991)		Etude du dopage de type n et p des matériaux GaAs et GaInP
002993 (1991)		Optical investigations of GaAs-GaInP quantum wells and superlattices grown by metalorganic chemical vapor deposition
002A06 (1991)		MOMBE growth of high quality GaAs/GaInP heterostructures
002A28 (1991)		GaAs-GaInP multilayers for high performance electronic devices
002A29 (1991)		Ga0.51In0.49P/GaxIn1-xAs lattice-matched (x=1) and strained (x=0.85) two-dimensional electron gas field-effect transistors
002A56 (1991)		Defects in organometallic vapor-phase epitaxy-grown GaInP layers
002A72 (1991)		A review of the band offsets measurements in the GaAs/Ga0.49In0.51P system
002B01 (1990)		The first fabrication of n- and p-type Ga0.49In0.51P/Ga(In)As lattice matched and strained HIGFET structures grown by MOCVD
002B14 (1990)		Quantum and classical lifetimes in a Ga0.49In0.51P/GaAs heterojunction
002B34 (1990)		Magnetotransport measurements in GaInP/GaAs heterostructures
002B35 (1990)		MOMBE growth of high-quality InP and GalnAs bulk, heterojunction and quantum well layers
002B42 (1990)		Interdiffusion of InGaAs/InP quantum wells by germanium ion implantation
002B48 (1990)		In situ investigation of the low-pressure metalorganic chemical vapor deposition of lattice-mismatched semiconductors using reflectance anisotropy measuremets
002B49 (1990)		In situ investigation of InAs metalorganic chemical vapor deposition growth using reflectance anisotropy
002B55 (1990)		High performance GaAs/GaInP heterostructure bipolar transistors grown by low-pressure meta========???010???.horbar;organic chemical vapour deposition
002C11 (1989)		Première observation d'une résistance différentielle négative dans un système à double barrière InP/Ga0,47In0,53As
002C19 (1989)		Croissance et caractérisation d'hétérostructures GaAs/Ga0,49In0,51P élaborées par LP-MOCVD
002C20 (1989)		Croissance et caractérisation d'alliages GaInAsP de gaps égaux à 1,3 et 1,15 μm élaborés par LP-MOCVD
002C21 (1989)		Couches d'InP de très haute pureté obtenues par croissance en phase vapeur par la méthode des organométalliques

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List of associated KwdEn.i

Nombre de documents	Descripteur
31	Indium Phosphides
25	Chemical vapor deposition
24	Heterojunction
23	Experimental study
23	Gallium Arsenides
22	Semiconductor materials
21	Gallium Indium Arsenides Mixed
20	Inorganic compound
16	Gallium Indium Arsenides phosphides Mixed
16	Organometallic compound
13	Gallium Indium Phosphides Mixed
11	Crystal growth
9	Photoluminescence
8	Low pressure
7	Epitaxy
7	Quantum well
7	Shubnikov de Haas effect
7	Superlattice
7	Thin film
6	Electron gas
6	Multiple quantum well
6	Semiconductor laser
5	Charge carrier concentration
5	Field effect transistor
5	Monolithic integrated circuit
5	Quantum Hall effect
4	CW laser
4	Characterization
4	Cyclotron resonance
4	Double heterojunction
4	Magnetoconductivity
4	Manufacturing
4	Microelectronic fabrication
4	Optical properties
4	Optical waveguide
4	Optoelectronic device
4	Photoconductivity
4	Silicon
4	Temperature
4	Two dimensional model
3	Band structure
3	Charge carrier mobility
3	Electrical properties
3	Exciton
3	Infrared radiation
3	Integrated optics
3	Low temperature
3	Secondary ion mass spectrometry
3	Two dimensional system
3	X ray diffraction
2	Acceptor center
2	Anisotropy
2	Chemical diffusion
2	Deep level transient spectrometry
2	Donor center
2	Doping
2	Effective mass
2	Electrical conductivity
2	Electrooptical modulator
2	Excitation spectrum
2	Gallium Indium Arsenides phosphides
2	Gallium Indium Phosphides
2	Growth from vapor
2	Hall effect
2	High electron mobility transistor
2	Hydrostatic pressure
2	III-V compound
2	Illumination
2	Indium Arsenides
2	Interdiffusion
2	Ion implantation
2	Landau level
2	Magnetooscillatory properties
2	Measurement
2	Optical absorption
2	Optical receiver
2	Photoconducting device
2	Photodiode
2	Radiation detector
2	Reflectance
2	Ridge waveguide
2	Solid solid interface
2	Solid solution
2	Thickness
2	Transmission electron microscopy
2	Voltage capacity curve
2	Voltage current curve
2	Voltage threshold
1	Advanced technology
1	Aluminium Gallium Arsenides Mixed
1	Application
1	Auger electron spectrometry
1	Bound exciton
1	Bound state
1	Buffer layer
1	Buried channel
1	Buried layer
1	Charge carrier trapping
1	Chemical composition
1	Complex defect

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