M. Qiu < M. Quillec < M. Quintero

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 24.
[0-20] [0 - 20][0 - 24][20-23][20-40]

Ident.	Authors (with country if any)	Title
001590 (1999-02-15)		Oxide confining layer on an InP substrate
001704 (1999)		MOVPE growth of a monolithic VCSEL at 1.56 μm in the InGaAlAs-InAlAs system lattice matched to InP
001789 (1999)		+55 °C Pulse lasing at 1.56 μm of all-monolithic InGaAlAs/InP vertical cavity lasers
001975 (1998)		Low temperature planar regrowth of semi-insulating InP by low pressure hydride vapour phase epitaxy for device application
001B30 (1997-05-26)		Low threshold InGaAlAs monolithic vertical cavity bistable device at 1.5 μm wavelength
001C35 (1997)		Monolithic vertical cavity device lasing at 1.55μm in InGaAlAs system
001C93 (1997)		Controlled steam oxidation of AlInAs for microelectronics and optoelectronics applications
001D73 (1996-07-15)		Superlattice effects induced by atomic ordering on GaxIn1-xP Raman modes
001E24 (1996-03-01)		Kinematic versus dynamic approaches of x-ray diffraction simulation. Application to the characterization of InGaAs/InGaAlAs multiple quantum wells
002019 (1995-09-15)		Theoretical comparison of GaInAs/GaAlInAs and GaInAs/GaInAsP quantum-well lasers
002202 (1995)		Continuous molecular beam epitaxy of arsenides and phosphides applied to device structures on InP substrates
002524 (1993)		Very low chirping of InGaAs-InGaAlAs MQW DFB BRS lasers under 10 Gbit/s modulation
002714 (1993)		Cryogenic investigation of gate leakage and RF performance down to 50K of 0.2μm AlInAs/GaInAs/InP HEMT's
002860 (1992)		Interest in AlGalnAs on InP for optoelectronic applications
002885 (1992)		High speed ultralow chirp 1.55μm MBE grown GaInAs/AlGaInAs MQW DFB lasers
002A07 (1991)		MBE growth of graded index AlGaInAs MQW lasers on InP
002A32 (1991)		First DFB GRIN-SCH GalnAs/AlGalnAs 1.55μm MBE MQW active layer buried ridge structure lasers
002B36 (1990)		Low-threshold GRIN-SCH AlGaInAs 1•55 μm quantum well buried ridge structure lasers grown by molecular beam epitaxy
002B67 (1990)		Enhancement of group III atom interdiffusion by nondopant oxygen implants in In0.53Ga0.47As-In0.52Al0.48As multiquantum wells
002C87 (1989)		Auto lattice matching effect for AllnAs grown by MBE at high substrate temperature
002D95 (1988)		Growth and characterization of AlGaInAs lattice matched to InP grown by molecular-beam epitaxy

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List of associated KwdEn.i

Nombre de documents	Descripteur
11	Experimental study
7	Aluminium Gallium Indium Arsenides Mixed
7	Multiple quantum well
6	Molecular beam condensation
6	Photoluminescence
5	Crystal growth
5	Gallium Indium Arsenides Mixed
5	Inorganic compound
5	Semiconductor laser
5	Semiconductor lasers
4	Indium Phosphides
4	Semiconductor materials
3	Aluminium Arsenides
3	Distributed feedback laser
3	Epitaxy
3	Experiments
3	Gallium arsenides
3	III-V compound
3	Indium Arsenides
3	Ternary compound
3	Thin film
2	Aluminium arsenides
2	Aluminium compounds
2	Binary compound
2	Buried laser
2	Chemical composition
2	Electron mobility
2	GRIN SCH laser
2	Gallium Arsenides
2	III-V semiconductors
2	Indium arsenides
2	Indium compounds
2	Indium phosphides
2	Injection laser
2	Low pressure metallorganic vapor phase epitaxy
2	Metallorganic vapor phase epitaxy
2	Microelectronic fabrication
2	Mirrors
2	Molecular beam
2	Oxidation
2	Quantum wells
2	Semiconducting indium compounds
2	Semiconducting indium phosphide
2	Semiconductor growth
2	Superlattice
2	Surface emitting lasers
2	Theoretical study
2	Transmission electron microscopy
2	VPE
2	Vertical cavity surface emitting laser
2	X ray diffraction
2	XRD
1	Aluminium Gallium Indium Arsenides
1	Aluminium Indium Arsenides
1	Aluminium Indium Arsenides Mixed
1	Application
1	Arsenides
1	Auger electron spectrometry
1	BRS laser
1	Band structure
1	Binary compounds
1	Blueshift
1	Characterization
1	Chemical diffusion
1	Chirp
1	Computer simulation
1	Concentration distribution
1	Cryogenic temperature
1	Crystal growth from vapors
1	Crystal lattices
1	Crystallinity
1	Current density
1	Cut off frequency
1	Deformation
1	Diffusion
1	Diode
1	Distributed Bragg reflector
1	Doping
1	Electrical properties
1	Electro-optical effects
1	Electrooptical modulator
1	Epitaxial layers
1	Eye diagram
1	Field effect transistor
1	Frequency characteristic
1	Gain
1	Gallium phosphides
1	Growth interface
1	Hall effect
1	Heat resistance
1	Heteroepitaxy
1	High electron mobility transistor
1	Homoepitaxy
1	Hydrides
1	Infrared absorption
1	Ion implantation
1	Iron additions
1	Laser mode locking
1	Laser resonators
1	Leakage current

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