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Index « Auteurs » - entrée « M. Potemski »
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M. Potel < M. Potemski < M. Pouchard  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 16.
Ident.Authors (with country if any)Title
000150 (2011) Time resolved spectroscopy on quantum dots and graphene at the FELBE free-electron laser
000377 (2009) Three-dimensional localization of excitons in the InAs/GaAs wetting layer -magnetospectroscopic study
000427 (2009) Investigation of interband optical transitions by near-resonant magneto-photoluminescence in InAs/GaAs quantum dots
000594 (2008) Charged and neutral excitons in natural quantum dots in the InAs/GaAs wetting layer
000789 (2006) Optical spectroscopy of a single InAs/GaAs quantum dot in high magnetic fields
000891 (2005) Single-dot spectroscopy in high magnetic fields
000966 (2005) Fine structure in the excitonic emission of InAs/GaAs quantum dot molecules
000A30 (2004-05-07) Excitonic Energy Shell Structure of Self-Assembled InGaAs/GaAs Quantum Dots
000B55 (2004) Electronic structure of InAs/GaAs self-assembled quantum dots studied by high-excitation luminescence in magnetic fields up to 73 T
000E55 (2002-06-15) Free-to-bound and interband recombination in the photoluminescence of a dense two-dimensional electron gas
001421 (2000) Magneto-photoluminescence study of energy levels of self-organised InAs/GaAs quantum dots
001B43 (1997-03-15) Optically detected oscillations of screening by a two-dimensional electron gas in a magnetic field
001C16 (1997) Reversal of Zeeman splitting in InGaAs/InP quantum wires in high magnetic field
001D69 (1996-08-15) Relationship between nonparabolicity and confinement energies in In0.53Ga0.47As/InP quantum wires
001D90 (1996-06-01) Strain and quantum confinement energies in n-type modulation-doped lattice-mismatched InAsP quantum-well wires
002009 (1995-10-15) Dimensionality effects on strain and quantum confinement in lattice-mismatched InAsxP1-x/InP quantum wires

List of associated KwdEn.i

Nombre de
documents		Descripteur
12Gallium arsenides
12Photoluminescence
11Indium arsenides
9Quantum dots
8Experimental study
8Magnetic field effects
6Excitons
6Magneto-optical effects
5Binary compounds
5Semiconductor materials
4Energy-level splitting
4High field
4Self-assembled layers
3Indium compounds
3Indium phosphides
3Zeeman effect
2Aluminium compounds
2Electronic structure
2III-V semiconductors
2Inorganic compounds
2Line splitting
2Luminescence
2Quantum wires
2Self-assembly
2Semiconductor quantum wells
2Ternary compounds
2Theoretical study
2g-factor
1Arsenic compounds
1Band structure
1Band theory
1Biexcitons
1Chemical potential
1Circular polarization
1Confinement
1Effective mass model
1Electron-hole recombination
1Energy levels
1Energy-level transitions
1Exciton phonon interaction
1Fermi level
1Fine structure
1Fluctuations
1Free electron lasers
1Gallium Arsenides
1Gallium compounds
1Ground states
1Holes
1Hybridization
1Indium Arsenides
1Interband transitions
1Interface states
1Lattice parameters
1Level crossing
1Line broadening
1Line shape
1Localized exciton
1Localized states
1Multiplet state
1Optical materials
1Optical transition
1Oscillations
1Phonon mode
1Relaxation time
1Self organization
1Semiconductor quantum dots
1Shear properties
1Single-particle model
1Size effect
1Spatial resolution
1Spectral shift
1Spin waves
1Strains
1Stranski Krastanow growth
1Time resolved spectroscopy
1Trion
1Two dimensional model
1Two-dimensional electron gas
1Ultrafast process
1ns range
1ps range

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