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Serveur d'exploration sur l'Indium - Analysis (France)

Index « Auteurs » - entrée « M. P. Besland »
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M. P. Berthet < M. P. Besland < M. P. Chauvat  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 9.
Ident.Authors (with country if any)Title
000B49 (2004) Growth and characterization of totally relaxed InGaAs thick layers on strain-relaxed paramorphic InP substrates
000F33 (2002) Reactive ion etching of sol-gel-processed SnO2 transparent conducting oxide as a new material for organic light emitting diodes
001783 (1999) 2μm resonant cavity enhanced InP/InGaAs single quantum well photo-detector
001D59 (1996-09-01) Optimized SiO2/InP structures prepared by electron cyclotron resonance plasma
002053 (1995-05-15) Desorption of ultraviolet-ozone oxides from InP under phosphorus and arsenic overpressures
002188 (1995) Electrical characterization of metal-oxide-InP tunnel diodes based on current-voltage, admittance and low frequency noise measurements
002651 (1993) In situ studies of the anodic oxidation of indium phosphide
002823 (1992) Passivation of InP using In(PO3)3-condensed phosphates : from oxide growth properties to metal-insulator-semiconductor field-effect-transistor devices
002A39 (1991) Evidence for a new passivating indium rich phosphate prepared by ultraviolet/ozone oxidation of InP

List of associated KwdEn.i

Nombre de
documents		Descripteur
6Experimental study
3Indium Phosphides
2Molecular beam epitaxy
2Oxidation
2Passivation
2Semiconductor materials
2Transmission electron microscopy
1AES
1Anode
1Anodizing
1Aqueous solution
1Atomic force microscopy
1Binary compound
1Bragg reflectors
1Characterization
1Controlled atmosphere
1Crystal face
1Crystal growth from vapors
1Crystalline structure
1Density of states
1Desorption
1Dielectric function
1Electrical properties
1Electrochemical reaction
1Electrode material
1Electrodes
1Electrolyte solution
1Ellipsometry
1Field effect transistor
1Gallium arsenides
1Growth
1Heteroepitaxy
1III-V semiconductors
1In situ
1Indium Phosphates
1Indium arsenides
1Indium phosphides
1Inorganic compound
1Light emitting diode
1MIS structure
1Membranes
1Mirrors
1Modified material
1Multiple layer
1N type conductivity
1Optical microscopy
1Organic compounds
1Oxides
1Ozone
1Performance evaluation
1Phosphoric acid
1Photodetectors
1Photodiodes
1Photoelectron spectrometry
1Photoelectron spectroscopy
1Photoluminescence
1Propanediol
1Quantum efficiency
1RHEED
1Reactive ion etching
1Resonant cavity enhanced photodetection
1Reviews
1Semiconducting indium gallium arsenide
1Semiconductor quantum wells
1Sol gel process
1Solid solid interface
1Stress relaxation
1Substrates
1Surface cleaning
1Surface electron state
1Surface treatment
1Ternary compounds
1Thickness
1Thin film
1Thin films
1Tin oxide
1Ultraviolet radiation
1Voltage capacity curve
1X ray

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EXPLOR_STEP=IndiumV3/Data/France/Analysis

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HfdIndexSelect -h $EXPLOR_AREA/Data/France/Analysis/Author.i  \
                -Sk "M. P. Besland" \
         | HfdSelect -Kh $EXPLOR_AREA/Data/France/Analysis/biblio.hfd

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   |clé=    M. P. Besland
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