Serveur d'exploration sur l'Indium - Analysis (France)

Index « Auteurs » - entrée « M. Moret »
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M. Moreno < M. Moret < M. Morsli  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 9.
Ident.Authors (with country if any)Title
000082 (2012) Unintentional incorporation of H and related structural and free-electron properties of c- and a-plane InN : Indium Nitride and Related Alloys
000115 (2012) Investigation of indium nitride for micro-nanotechnology
000219 (2011) Free electron properties and hydrogen in )nN grown by MOVPE : Growth of Group III Nitrides
000411 (2009) Optical, structural investigations and band-gap bowing parameter of GaInN alloys
000420 (2009) Metal organic vapour phase epitaxial growth of indium-rich InGaN alloys with robust photoluminescence properties
000421 (2009) MOVPE growth of InN buffer layers on sapphire
000438 (2009) InN excitonic deformation potentials determined experimentally
000452 (2009) Growth of InN films and nanostructures by MOVPE
000474 (2009) Alternative precursors for MOVPE growth of InN and GaN at low temperature

List of associated KwdEn.i

Nombre de
documents
Descripteur
8Indium nitride
7MOVPE method
6MOCVD
5III-V compound
5III-V semiconductors
4Gallium nitride
4Growth mechanism
4Photoluminescence
4VPE
3Carrier density
3Doping
3Thin films
2Ammonia
2Atomic force microscopy
2Buffer layer
2Energy gap
2Epitaxial layers
2Free electron
2Hydrogen additions
2Optical properties
2Thermal annealing
1Activation energy
1Adatoms
1CVD
1Carbon
1Carrier lifetime
1Columnar structure
1Crystal chemistry
1Crystal faces
1Crystal perfection
1Crystal structure
1Damage
1Defect density
1Deformation potential
1Depth profiles
1Dimensionality
1Dislocation density
1Droplets
1Electronic properties
1Gallium Nitrides
1Grain size
1Growth rate
1Halides
1Heterostructures
1Hexagonal crystals
1Impurities
1Impurity density
1Indium
1Indium Nitrides
1Inorganic compounds
1Lateral growth
1Line shape
1Line widths
1Microstructure
1Molecular beam epitaxy
1Nanostructures
1Nanotechnology
1Nitridation
1Non radiative recombination
1Operating conditions
1Optical characteristic
1Organic hydrazine
1Point defects
1Precursor
1Recrystallization
1Refractive index
1Robustness
1Sapphire
1Scanning electron microscopy
1Semiconductor materials
1Surface states
1Temperature dependence
1Ternary compounds
1Thermal activation
1Thick films
1Time resolution
1Time resolved spectra

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