Serveur d'exploration sur l'Indium - Analysis (France)

Index « Auteurs » - entrée « M. Leroux »
Attention, ce site est en cours de développement !
Attention, site généré par des moyens informatiques à partir de corpus bruts.
Les informations ne sont donc pas validées.
M. Leon < M. Leroux < M. Lesecq  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 23.
[0-20] [0 - 20][0 - 23][20-22][20-40]
Ident.Authors (with country if any)Title
000A11 (2005) Chemically ordered AlxGa1-xN alloys : Spontaneous formation of natural quantum wells
000E94 (2002) Vertical cavity InGaN LEDs grown by MOVPE
001108 (2001-04-01) Investigation of the P-As substitution at GaAs/Ga0.51In0.49P interfaces by photoluminescence under pressure
001176 (2001) Photoluminescence and absorption spectroscopy of silicon-doped InGaN layers
001185 (2001) Optoelectronic characterization of blue InGaN/GaN LEDs grown by MBE
001201 (2001) Modelling of absorption and emission spectra of InxGa1-xN layers grown by MBE
001326 (2000-08-01) Luminescence and absorption in InGaN epitaxial layers and the van Roosbroeck-Shockley relation
001422 (2000) MBE grown InGaN quantum dots and quantum wells : effects of in-plane localization
001446 (2000) Green electroluminescent (Ga, In, Al)N LEDs grown on Si (111)
001522 (1999-10-25) Indium incorporation above 800°C during metalorganic vapor phase epitaxy of InGaN
001860 (1998-06-15) Band edge versus deep luminescence of InxGa1-xN layers grown by molecular beam epitaxy
001955 (1998) Photoluminescence studies of As-P exchange in GaAs/GaInP2 quantum wells grown by chemical beam epitaxy
001B38 (1997-04-01) Optical studies of highly strained InGaAs/GaAs quantum wells grown on vicinal surfaces
001B50 (1997-01-15) Optical study of segregation effects on the electronic properties of molecular-beam-epitaxy grown (In,Ga)As/GaAs quantum wells
001C52 (1997) Indium surface segregation during chemical beam epitaxy of Ga1-xInxAs/GaAs and Ga1-xInxP/GaAs heterostructures
001C84 (1997) Effects of segregation on the optical properties of (In,Ga)As/GaAs quantum wells grown by MBE under various conditions
001E33 (1996-01-15) Monte Carlo simulation of In surface segregation during the growth of InxGa1-xAs on GaAs(001)
002050 (1995-05-15) Optical investigations in (In,Ga)As/GaAs quantum wells grown by metalorganic molecular-beam epitaxy
002140 (1995) Origin of the blue shift observed in highly strained (Ga, In)As quantum wells grown on GaAs(001) vicinal surfaces
002287 (1994-05-16) Improved GaInAs/GaAs heterostructures by high growth rate molecular beam epitaxy
002646 (1993) Indium segregation and misorientation effects on the optical properties of MBE grown In0.35Ga0.65As/GaAs quantum wells

List of associated KwdEn.i

Nombre de
documents
Descripteur
19Experimental study
15Photoluminescence
11III-V semiconductors
10Gallium arsenides
8Molecular beam epitaxy
8Quantum wells
8Ternary compounds
7Indium arsenides
7Semiconductor materials
6Indium compounds
5Binary compounds
5Gallium compounds
4Gallium nitrides
4Indium nitrides
4Segregation
4Temperature dependence
3Absorption spectra
3Crystal growth from vapors
3Electronic structure
3Gallium nitride
3Semiconductor epitaxial layers
3Semiconductor quantum wells
3Theoretical study
3Thickness
3Thin films
2Band offset
2Binary compound
2Blue shift
2Chemical beam epitaxy
2Electroluminescence
2Energy gap
2Envelope function
2Excitons
2Gallium Arsenides
2Gallium phosphides
2Growth rate
2Heterojunctions
2Heterostructures
2Indium nitride
2Indium phosphides
2Inorganic compound
2Light emitting diode
2Light emitting diodes
2Line widths
2MOCVD coatings
2MOVPE method
2Manufacturing process
2Monte Carlo method
2Multilayers
2Optical properties
2Performance evaluation
2Quantum well
2Semiconductor growth
2Spectral shift
2Strains
2Surface segregation
2Temperature effects
2Temperature range 0000-0013 K
2Ternary compound
2VPE
2Wide band gap semiconductors
1Absorption coefficients
1Aluminium nitrides
1Arsenic compounds
1Binding energy
1Buried layer
1Carrier density
1Cathodoluminescence
1Cavity resonator
1Charge carrier recombination
1Charge carriers
1Conduction bands
1Confinement
1Crystal orientation
1Current voltage characteristics
1Dislocations (crystals)
1Distributed Bragg reflection
1Doped materials
1Electron diffraction
1Energy-level transitions
1Epitaxial layers
1Epitaxy
1Excitation spectrum
1Exciton
1Excitonic process
1Gallium Indium Arsenides Mixed
1Gallium Indium Phosphides Mixed
1Gallium indium nitride
1Green electroluminescent diodes
1Growth mechanism
1High pressure
1Hole
1III-V compound
1Impurity distribution
1In situ
1Indium
1Injection current
1Inorganic compounds
1Interface states
1Ion exchange

Pour manipuler ce document sous Unix (Dilib)

EXPLOR_STEP=IndiumV3/Data/France/Analysis
HfdIndexSelect -h $EXPLOR_AREA/Data/France/Analysis/Author.i -k "M. Leroux" 
HfdIndexSelect -h $EXPLOR_AREA/Data/France/Analysis/Author.i  \
                -Sk "M. Leroux" \
         | HfdSelect -Kh $EXPLOR_AREA/Data/France/Analysis/biblio.hfd 

Pour mettre un lien sur cette page dans le réseau Wicri

{{Explor lien
   |wiki=   *** parameter Area/wikiCode missing *** 
   |area=    IndiumV3
   |flux=    France
   |étape=   Analysis
   |type=    indexItem
   |index=    Author.i
   |clé=    M. Leroux
}}

Wicri

This area was generated with Dilib version V0.5.77.
Data generation: Mon Jun 9 10:27:54 2014. Site generation: Thu Mar 7 16:19:59 2024