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Index « Auteurs » - entrée « M. Lannoo »
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M. Lancin < M. Lannoo < M. Lapeyrade  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 11.
Ident.Authors (with country if any)Title
000E68 (2002-04-15) Interpretation and theory of tunneling experiments on single nanostructures
002298 (1994-04-15) Defect-assisted apparent lowering of band offsets
002683 (1993) Electronic structure of crystalline InP oxides
002963 (1991) Tunnel deep level transient spectroscopy on a single quantum well
002966 (1991) Tin oxidation and the electronic structure of SnS-In2S3-SnS2 systems
002B22 (1990) Optical properties of the main electron-irradiation-induced defects in p-type InP : comparison with calculations for the isolated and acceptor-paired phosphorus vacancy
002B68 (1990) Electronic structure of semiconductor oxides : InPO4, In(PO3)3, P2O5, SiO2, AlPO4, and Al(PO3)3
002C90 (1989) Absolute photoionization cross-sections of 3d ions in InP: a comparison between experiment and theory
002D33 (1988) Theoretical calculation of band-edge discontinuities near a strained heterojunction: application to (In,Ga)As/GaAs
002E27 (1988) Band-edge deformation potentials in a tight-binding framework
002E70 (1987) Theory of the chemical shift at relaxed (110) surfaces of III-V semiconductor compounds

List of associated KwdEn.i

Nombre de
documents		Descripteur
8Theoretical study
7Inorganic compound
7Tight binding approximation
6Semiconductor materials
5Experimental study
5Indium Phosphides
4Gallium Arsenides
3Tunnel effect
3Valence band
2Band structure
2Cross section
2Density of states
2Electronic structure
2Gallium Antimonides
2Gallium Indium Arsenides Mixed
2Gallium Phosphides
2III-V compound
2Impurity
2Indium Antimonides
2Indium Arsenides
2Low temperature
2Oxidation number
2Photoelectron emission
2Photoionization
2Temperature
1Aluminium Antimonides
1Aluminium Arsenides
1Aluminium Phosphates
1Aluminium Phosphides
1Aluminium arsenides
1Binding energy
1Blende structure
1Capacitance
1Charge carrier trapping
1Charge transfer
1Chemical bond
1Chemical shift
1Comparative study
1Complex defect
1Conduction bands
1Core level
1Deep level transient spectrometry
1Defect level
1Defect states
1Deformation potential
1Electron emission
1Electrons
1Empirical model
1Energy gap
1Gallium arsenides
1Green function
1Heterojunction
1Heterostructures
1Hydrostatic pressure
1III-V semiconductors
1Impurity level
1Indium Phosphates
1Indium arsenides
1Indium compounds
1Investigation method
1Ionization
1Irradiation
1Localized state
1Mixed oxidation number
1Optical method
1Oxides
1Phosphites
1Photoelectron spectrometry
1Quantum interference phenomena
1Quantum well
1Quantum wells
1Quasiparticles
1Residual stress
1Semiconductor quantum dots
1Semiconductor-metal boundaries
1Silicon Oxides
1Spin orbit interaction
1Stoichiometry
1Surface electron state
1Surface reconstruction
1Ternary compounds
1Thermionic emission
1Tight-binding calculations
1Tin Sulfides
1Transition metal
1Uniaxial strain
1Vacancy
1X ray
1Zinc

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HfdIndexSelect -h $EXPLOR_AREA/Data/France/Analysis/Author.i  \
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