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Serveur d'exploration sur l'Indium - Analysis (France)

Index « Auteurs » - entrée « M. Krakowski »
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M. Kostrzewa < M. Krakowski < M. Kratochvilova  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 14.
Ident.Authors (with country if any)Title
000513 (2008) RECENT DEVELOPMENTS OF InP-BASED QUANTUM DASHES FOR DIRECTLY MODULATED LASERS AND SEMICONDUCTOR OPTICAL AMPLIFIERS
000536 (2008) Narrow linewidth and demonstration of saturation spectra of the Cesium at 852nm with high power Al-free DFB laser diodes
000570 (2008) High power Al-free DFB laser diode for atomic clocks : narrow linewidth and demonstration of saturation spectra of the Cesium D2 line
000654 (2007) Narrow linewidth, high-power al-free active region (λ = 852nm) DFB laser diodes for atomic clocks and interferometry applications
000741 (2006) Lasers à boîtes quantiques sur InP à 1,55μm présentant en fonctionnement continu une puissance élevée, un très faible bruit et une longue durée de vie
000820 (2006) High-power al-free active region (λ = 852nm) laser diodes for atomic clocks and interferometry applications
000860 (2006) Al-free active region (λ = 852nm) DFB laser diodes for atomic clocks and interferometry applications
000947 (2005) InP based lasers and optical amplifiers with wire-/dot-like active regions : Self-Organized Quantum Dots
000F78 (2002) Measurement of gain spectra, refractive index shift and linewidth enhancement factor in Al-free 980 nm lasers with broadened waveguide
001F07 (1996) Low temperature behaviour of laser diodes
002D25 (1988) Very low threshold operation of 1.52 μm GaInAsP/InP DFB buried ridge structure laser diodes entirely grown by MOCVD
002F50 (1987) CW phase-locked array Ga0.25In0.75As0.5P0.5-Inp high power semiconductor laser grown by low-pressure metalorganic chemical vapor deposition
003092 (1984) cw operation of 1.57-μm GaxIn1-xAsyP1-yInP distributed feedback lasers grown by low-pressure metalorganic chemical vapor deposition
003122 (1984) CW operation of GaInAsP buried ridge structure laser at 1.5 μm grown by LP-MOCVD

List of associated KwdEn.i

Nombre de
documents		Descripteur
8Semiconductor lasers
6Distributed feedback lasers
6Indium Phosphides
6Quaternary compounds
5Atomic clocks
5Compressive stress
5Indium arsenides
5Laser diodes
5Line widths
5Optical resonators
4Chemical vapor deposition
4Gallium Indium Arsenides phosphides Mixed
4Gallium arsenides
4Gallium phosphides
4Indium phosphides
4Optical waveguides
4Organometallic compound
4Positioning
4Semiconductor laser
3Binary compounds
3CW laser
3Crystal growth
3Fabry-Perot resonators
3Feedback
3Gallium Arsenides
3Heterostructures
3Low pressure
3Radiation quality
3Threshold current
2Current density
2Distributed feedback laser
2Experimental study
2Fabry-Perot interferometers
2Far field
2Gallium Phosphides
2III-V semiconductors
2Indium Arsenides
2Infrared laser
2Injection laser
2Optical pumping
2Optoelectronic devices
2Output power
2Quantum wells
2Ridge waveguide
2Semiconductor optical amplifiers
2Strained quantum well
1Aging
1Aluminium
1Amplified spontaneous emission
1Buried laser
1Buried structure
1Cold atom
1Device lifetime
1Dynamic properties
1Fabry Perot resonator
1Gyroscopes
1Laser noise
1Low frequency
1Manufacturing
1Measuring methods
1Mirrors
1Network
1Optical communication
1Optical gain
1Optimization method
1Performance characteristic
1Phase locking
1Quantum dot lasers
1Quantum dots
1Quantum well lasers
1Quantum wires
1Radiation sources
1Refractive index
1Reliability
1Single mode laser
1Static properties
1Ternary compounds
1Threshold
1Wavelength division multiplexing

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HfdIndexSelect -h $EXPLOR_AREA/Data/France/Analysis/Author.i  \
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