IndiumV3, France, Analysis, indexItem, Author.i, M. Juhel

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 12.

Ident.	Authors (with country if any)	Title
001864 (1998-05-18)		Evidence of hydrogen-carbon interactions in plasma hydrogenated carbon-doped n-InP
001975 (1998)		Low temperature planar regrowth of semi-insulating InP by low pressure hydride vapour phase epitaxy for device application
001A26 (1998)		CBE growth of carbon doped InGaAs/InP HBTs for 25 Gbit/s circuits
001B33 (1997-05)		Anisotropic etching of InP with low sidewall and surface induced damage in inductively coupled plasma etching using SiCl4
001C76 (1997)		Evaluation of the properties of hydrogenated InP/InGaAsP double heterostructure waveguides
001D40 (1996-11)		High stability heterojunction bipolar transistors with carbon-doped base grown by atomic layer chemical beam epitaxy
001E08 (1996-05)		Sidewall and surface induced damage comparison between reactive ion etching and inductive plasma etching of InP using a CH4/H2/O2 gas mixture
001F28 (1996)		Improved stability of C-doped GaAs grown by chemical beam epitaxy for heterojunction bipolar transistor applications
002074 (1995-02-06)		Cation interdiffusion in InGaAsP/InGaAsP multiple quantum wells with constant P/As ratio
002077 (1995-01-23)		New encapsulant source for III-V quantum well disordering
002210 (1995)		An optical study of interdiffusion in strained InP-based heterostructures
002708 (1993)		Determination of oxygen and carbon contaminations in InGaAs molecular beam epitaxy using growth interruptions

List of associated KwdEn.i

Nombre de documents	Descripteur
11	Experimental study
7	Photoluminescence
6	Indium phosphides
4	Gallium arsenides
4	III-V semiconductors
4	Semiconductor materials
3	Annealing
3	Doping
3	Gallium phosphides
3	Hydrogen
3	Indium arsenides
3	Quantum wells
2	Binary compound
2	Binary compounds
2	Diffusion
2	Epitaxial layers
2	Heterojunction transistor
2	III-V compound
2	Indium compounds
2	Microelectronic fabrication
2	SIMS
1	Aluminium arsenides
1	Atomic force microscopy
1	Auger effect
1	Bipolar transistor
1	Bipolar transistors
1	Blue shift
1	Bromides
1	CBE
1	Carbon
1	Carbon addition
1	Carbon additions
1	Charge carrier concentration
1	Chemical beam condensation
1	Comparative evaluations
1	Concentration distribution
1	Contamination
1	Crystal growth
1	Crystal growth from vapors
1	Damage
1	Diffusion coating
1	Electron beam lithography
1	Electron density
1	Electron mobility
1	Epitaxy
1	Etching
1	Excitons
1	Fabrication property relation
1	Gallium Arsenides
1	Gallium Indium Arsenides Mixed
1	Gallium phosphide
1	Growth from vapor
1	Hall effect
1	Heterojunctions
1	Heterostructures
1	Homoepitaxy
1	Hydrides
1	Hydrogenation
1	Impurity
1	Impurity density
1	Impurity states
1	Indium Arsenides
1	Indium Phosphides
1	Indium phosphide
1	Inorganic compound
1	Interdiffusion
1	Interface structure
1	Ion beams
1	Iron additions
1	Low pressure
1	Low temperature
1	Measuring methods
1	Methane
1	Molecular beam condensation
1	Morphology
1	Optoelectronic device
1	Order-disorder transformations
1	Oxygen
1	Passivation
1	Quaternary compound
1	Quaternary compounds
1	Raman spectra
1	SEM
1	Secondary ion mass spectra
1	Secondary ion mass spectrometry
1	Selective growth
1	Silicon oxides
1	Spectral shift
1	Sputter etching
1	Stability
1	Surface structure
1	TEM
1	Temperature dependence
1	Ternary compound
1	Ternary compounds
1	Thermal instabilities
1	Thick film
1	Thin film
1	Thin films
1	VPE

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   |clé=    M. Juhel
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Serveur d'exploration sur l'Indium - Analysis (France)Index « Auteurs » - entrée « M. Juhel »

List of bibliographic references

List of associated KwdEn.i

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri

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Index « Auteurs » - entrée « M. Juhel »