M. Gayral < M. Gendry < M. Gentry

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 90.
[0-20] [0 - 20][0 - 50][20-40]

Ident.	Authors (with country if any)	Title
000060 (2013)		Excitonic properties of wurtzite InP nanowires grown on silicon substrate
000113 (2012)		Morphological and structural properties of InP/Gd203 nanowires grown by molecular beam epitaxy on silicon substrate
000120 (2012)		InAs/InP nanowires grown by catalyst assisted molecular beam epitaxy on silicon substrates
000127 (2012)		Growth of vertical and defect free InP nanowires on SrTiO3(001) substrate and comparison with growth on silicon
000330 (2010)		Electrical properties of self-assembled InAs/InAlAs quantum dots on InP
000366 (2010)		3D harnessing of light with photon cage
000702 (2007)		Deep level transient spectroscopy studies at low temperature of In0.52Al0.48As epilayers
000786 (2006)		Photoreflectance spectroscopy of self-organized InAs/InP(0 01) quantum sticks emitting at 1.55 μm
000788 (2006)		Optical transitions and carrier dynamics in self-organized InAs quantum dots grown on In0.52Al0.48As/InP(0 0 1)
000819 (2006)		Hole emission processes from InAs quantum dots grown on p-type InAlAs/InP(001)
000888 (2005)		Strain, size and composition of InAs quantum sticks, embedded in InP, determined via X-ray anomalous diffraction and diffraction anomalous fine structure in grazing incidence
000942 (2005)		Intraband polaron dynamics of excited carriers in InAs/InxAl1-xAs quantum dots
000973 (2005)		Experimental and theoretical investigation into the difficulties of thallium incorporation into III-V semiconductors
000A29 (2004-05-07)		Strain, Size, and Composition of InAs Quantum Sticks Embedded in InP Determined via Grazing Incidence X-Ray Anomalous Diffraction
000A32 (2004-05-01)		From large to low height dispersion for self-organized InAs quantum sticks emitting at 1.55 μm on InP (001)
000A33 (2004-04-15)		Spectroscopy of the electronic states in InAs quantum dots grown on InxAl1-xAs/InP(001)
000A85 (2004)		STM and FIB nano-structuration of surfaces to localise InAs/InP(0 0 1) quantum dots
000B93 (2004)		A comparative study of gatlas, intlas and gaintlas grown by SSMBE : The detrimental effect of indium
000C22 (2003-08-15)		Optical absorption spectroscopy measurement of the gap shrinkage due to thallium incorporation in GaInTlAs alloys
000C29 (2003-07-15)		Enhanced photoconductive signal in InAs quantum dots due to plasma confined microcavities
000C38 (2003-05-15)		Dynamic saturation of an intersublevel transition in self-organized InAs/InxAl1-xAs quantum dots

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List of associated KwdEn.i

Nombre de documents	Descripteur
58	Experimental study
39	III-V semiconductors
37	Molecular beam epitaxy
35	Indium arsenides
27	Gallium arsenides
27	Photoluminescence
24	Indium compounds
20	Indium phosphides
14	Aluminium arsenides
14	Semiconductor materials
13	Indium Phosphides
13	Ternary compounds
9	Island structure
9	Quantum dots
9	Sulfurization
9	Surface structure
8	Atomic force microscopy
8	Crystal growth
8	III-V compound
8	Passivation
8	Semiconductor epitaxial layers
7	Binary compounds
7	Growth mechanism
7	Heterostructures
7	STM
7	Semiconductor growth
7	Stress relaxation
7	Thin film
6	Chemical composition
6	Epitaxial layers
6	Heterojunctions
6	Nanostructured materials
6	Self-assembly
6	Semiconductor quantum dots
6	Semiconductor quantum wells
5	Aluminium compounds
5	Excited states
5	Inorganic compound
5	Nanostructures
5	Nanowires
5	Oxidation
5	Photoelectron spectroscopy
5	Plasma
5	Quantum wells
5	RHEED
5	Surface reconstruction
5	Theoretical study
5	Thin films
4	Characterization
4	Crystal growth from vapors
4	Ground states
4	Indium Sulfides
4	Infrared spectra
4	Kinetics
4	Morphology
4	Nanomaterial synthesis
4	Optical properties
4	Photoelectron spectrometry
4	Self organization
4	Semiconductor quantum wires
4	Thickness
4	Time resolved spectra
4	X ray
4	XRD
3	Binding energy
3	Compressive stress
3	Crystal structure
3	DLTS
3	Electrical properties
3	Electron-phonon interactions
3	Energy gap
3	Glow discharge
3	Indium Phosphates
3	Indium phosphide
3	Inorganic compounds
3	Interface states
3	Microelectronic fabrication
3	Micromachining
3	Native state
3	Photoconductivity
3	Photodetector
3	Photodetectors
3	Pseudomorphic growth
3	Quantum well lasers
3	Quantum wires
3	Reflection high energy electron diffraction
3	Stoichiometry
3	Strains
3	Substrates
3	Surface treatment
3	TEM
3	Temperature dependence
3	Temperature effects
3	Tensile stress
3	Valence bands
2	Activation energy
2	Annealing
2	Arsenic compounds
2	Band structure
2	Binary compound

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