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Serveur d'exploration sur l'Indium - Analysis (France)

Index « Auteurs » - entrée « M. Eddrief »
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M. Echabaane < M. Eddrief < M. Edely  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 15.
Ident.Authors (with country if any)Title
001021 (2002) Evolution of Raman spectra as a function of layer thickness in ultra-thin InSe films
001769 (1999) Band structure of an epitaxial thin film of InSe determined by angle-resolved ultraviolet photoelectron spectroscopy
001944 (1998) Reconstructions upon thermal desorption in ultra high vacuum of InSe covered Si(111) surfaces
001986 (1998) Interface between a III-VI intercalation compound and a solid electrolyte : XPS and RHEED study
001B85 (1997) Ultra-high vacuum deposition of sodium on indium monoselenide : Intercalation or chemical reaction?
001C46 (1997) Ion beam modification of InSe surfaces
001D01 (1997) Brillouin scattering study of epitaxial InSe films grown on the Si(111)1 x 1-H surface
001F18 (1996) Interface properties of MBE grown InSe/Si(111) heterojunctions
002339 (1994) X-ray, reflection high electron energy diffraction and X-ray photoelectron spectroscopy studies of InSe and γ-In2Se3 thin films grown by molecular beam deposition
002539 (1993) Study of the heterointerfaces InSe on GaSe and GaSe on InSe
002800 (1992) Temperature dependent far-infrared reflectance of layer structured III-VI compounds
002896 (1992) Far-infrared studies of the intermediate phases in In2Se3
002897 (1992) Far-infared spectra of indium selenide single crystals
003029 (1986) Electrical and optical properties of In2Se3 thin films
003103 (1984) Optimization of growth conditions for In2Se3 films

List of associated KwdEn.i

Nombre de
documents		Descripteur
12Experimental study
8Indium selenides
6Indium Selenides
6Photoelectron spectroscopy
5Semiconductor materials
4Thin films
3Growth mechanism
3Infrared absorption
3Inorganic compound
3Molecular beam epitaxy
3Thin film
3X radiation
2AES
2Annealing
2Band structure
2Crystal growth
2Electrical conductivity
2Far infrared radiation
2Gallium Selenides
2Heterojunctions
2III-VI semiconductors
2Lamellar structure
2RHEED
2Surface reconstruction
2Temperature
1Absorptance
1Activation energy
1Band offset
1Binary compounds
1Borate glasses
1Brillouin effect
1Brillouin zones
1Charge carrier concentration
1Coherence length
1Core level
1Crystal growth from vapors
1Dispersion relations
1Elastic constants
1Electron diffraction
1Electronic structure
1Energy gap
1Epitaxial film
1Epitaxial layers
1Far infrared spectrum
1Gamma phase
1Hall effect
1Hall mobility
1In situ
1Infrared spectrometry
1Intercalation compound
1Intercalation compounds
1Interface
1Interface structure
1Ion beams
1Kramers Kronig analysis
1LEED
1Linear model
1Lithium
1Low temperature
1Molecular beam condensation
1Monocrystals
1One dimensional model
1Operating conditions
1Optical phonon
1Optical properties
1Phase transformation
1Phase transitions
1Phonon
1Phonon dispersion
1Phonon mode
1Photoconductivity
1Photoelectron spectrometry
1Physical radiation effects
1Raman spectra
1Reflectance
1Reflection high energy electron diffraction
1Refraction index
1Silicon
1Single crystal
1Sodium
1Sodium borates
1Solid electrolytes
1Solid-solid interfaces
1Surface states
1Surface structure
1Synchrotron radiation
1Temperature effect
1Temperature effects
1Thickness
1Ultrahigh vacuum
1Ultrathin films
1Ultraviolet radiation
1Vacuum deposition
1Visible absorption
1X-ray diffraction

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