IndiumV3, France, Analysis, indexItem, Author.i, M. Defour

M. Debbichi < M. Defour < M. Delaage

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 18.

Ident.	Authors (with country if any)	Title
002952 (1991)		Etude du dopage de type n et p des matériaux GaAs et GaInP
002B01 (1990)		The first fabrication of n- and p-type Ga0.49In0.51P/Ga(In)As lattice matched and strained HIGFET structures grown by MOCVD
002B48 (1990)		In situ investigation of the low-pressure metalorganic chemical vapor deposition of lattice-mismatched semiconductors using reflectance anisotropy measuremets
002B49 (1990)		In situ investigation of InAs metalorganic chemical vapor deposition growth using reflectance anisotropy
002B55 (1990)		High performance GaAs/GaInP heterostructure bipolar transistors grown by low-pressure meta========???010???.horbar;organic chemical vapour deposition
002C11 (1989)		Première observation d'une résistance différentielle négative dans un système à double barrière InP/Ga0,47In0,53As
002C19 (1989)		Croissance et caractérisation d'hétérostructures GaAs/Ga0,49In0,51P élaborées par LP-MOCVD
002C20 (1989)		Croissance et caractérisation d'alliages GaInAsP de gaps égaux à 1,3 et 1,15 μm élaborés par LP-MOCVD
002C21 (1989)		Couches d'InP de très haute pureté obtenues par croissance en phase vapeur par la méthode des organométalliques
002C76 (1989)		Extremely high electron mobility in a GaAs-GaxIn1-xP heterostructure grown by metalorganic chemical vapor deposition
002C79 (1989)		Electron spin resonance in the two-dimensional electron gas of a GaAs-GaxIn1-xP heterostructure
002D26 (1988)		Very high purity InP epilayer grown by metalorganic chemical vapor deposition
002D90 (1988)		High-quality GaInAsP/InP heterostructures grown by low-pressure metalorganic chemical vapor deposition on silicon substrates
002D91 (1988)		High-quality GaAs/Ga0.49In0.51P superlattices grown on GaAs and silicon substrates by low-pressure metalorganic chemical vapor deposition
002E00 (1988)		First room-temperature cw operation of a GalnAsP/InP light-emitting diode on a silicon substrate
002E01 (1988)		First cw operation of a Ga0.25In0.75As0.5P0.5-InP laser on a silicon substrate
002E02 (1988)		First GaInAsP-InP double-heterostructure laser emitting at 1.27 μm on a silicon substrate
002F21 (1987)		First observation of quantum Hall effect in a GaInAsP-InP heterostructure grown by metalorganic chemical vapor deposition

List of associated KwdEn.i

Nombre de documents	Descripteur
11	Chemical vapor deposition
10	Indium Phosphides
8	Experimental study
7	Gallium Arsenides
7	Heterojunction
7	Inorganic compound
7	Semiconductor materials
6	Organometallic compound
5	Gallium Indium Arsenides phosphides Mixed
5	Gallium Indium Phosphides Mixed
4	Crystal growth
3	Characterization
3	Epitaxy
3	Low pressure
3	Thin film
2	Anisotropy
2	Charge carrier mobility
2	Cyclotron resonance
2	Doping
2	Double heterojunction
2	Electron gas
2	Gallium Indium Arsenides Mixed
2	Indium Arsenides
2	Magnetoconductivity
2	Manufacturing
2	Measurement
2	Optical properties
2	Photoluminescence
2	Reflectance
2	Semiconductor laser
2	Silicon
2	Temperature
2	Two dimensional model
1	Acceptor center
1	Application
1	Bound exciton
1	Buried layer
1	CW laser
1	Charge carrier concentration
1	Chemical composition
1	Conduction electron
1	Diode
1	Donor center
1	Electrical conductivity
1	Electrical properties
1	Electron paramagnetic resonance
1	Electronic component
1	Epitaxial film
1	Field effect transistor
1	G factor
1	Gallium Indium Arsenides Phosphides
1	Gallium Indium Phosphides
1	Growth
1	Growth from vapor
1	Hall effect
1	Hall mobility
1	Heterojunction transistor
1	High performance
1	High purity
1	III-V compound
1	Illumination
1	Impurity ionization
1	Insulating material
1	Interface
1	Landau level
1	Light emitting diode
1	Magnetic field
1	Magnetooscillatory properties
1	Microelectronic fabrication
1	Microwave
1	Mismatch lattice
1	Negative differential conductivity
1	Photoconductivity
1	Preparation
1	Quantum Hall effect
1	Quaternary structure
1	Residual impurity
1	Ridge waveguide
1	Shubnikov de Haas effect
1	Solid solid interface
1	Substrate
1	Substrate specificity
1	Superlattice
1	Surface
1	Thickness
1	Transistor
1	Transmission electron microscopy
1	Very low temperature
1	Voltage threshold
1	X ray diffraction
1	p n junction

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List of bibliographic references

List of associated KwdEn.i

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Index « Auteurs » - entrée « M. Defour »