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Index « Auteurs » - entrée « M. Brousseau »
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M. Broquier < M. Brousseau < M. Broyer  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 12.
Ident.Authors (with country if any)Title
001E75 (1996) Spin repolarization in bidimensional gas of interacting excitons
002078 (1995-01-15) Optical gain evaluation in GaInAsP quantum-well lasers: A comparison of the different growth techniques
002169 (1995) Hole spin relaxation in intrinsic quantum wells
002243 (1994-10-15) Exciton formation and hole-spin relaxation in intrinsic quantum wells
002271 (1994-07) Contribution à l'optimisation de structures laser à puits quantiques contraints sur la maille d'InP
002415 (1994) Enhanced exciton blue shift in spin polarized dense exciton system in quantum wells
002551 (1993) Spin relaxation of excitons in strained InGaAs/GaAs quantum wells
002626 (1993) Luminescence polarization and hole spin-relaxation in quantum wells
002789 (1992) Well-width dependence of the excitonic lifetime in strained III-V quantum wells
002867 (1992) Induced electrostatic confinement of the electron gas in tensile strained InGaAs/InGaAsP quantum well lasers
002977 (1991) Stark effect in GaInAs/GaInAsP quantum-wells
002A12 (1991) Interfacial-band discontinuities for strained layers on InxGa1-x as grown on (100) GaAs

List of associated KwdEn.i

Nombre de
documents		Descripteur
10Experimental study
8Gallium arsenides
8Quantum wells
8Semiconductor materials
7Indium arsenides
7Photoluminescence
5Binary compounds
5Ternary compounds
4Excitons
3Aluminium arsenides
3Gallium Indium Arsenides Mixed
3Gallium Indium Arsenides phosphides Mixed
3Inorganic compound
3Photoconductivity
3Spin relaxation
3Strained quantum well
2Band structure
2Chemical composition
2Depolarization
2Electronic structure
2Exciton
2Gallium Arsenides
2Indium phosphides
2Lifetime
2Luminescence decay
2Picosecond
2Quaternary compounds
2Semiconductor lasers
2Stark effect
2Theoretical study
2Time resolution
2Very low temperature
1Band offset
1Biexciton
1Binding energy
1Blue shift
1Charge carrier recombination
1Circular polarization
1Comparative evaluations
1Confinement
1Deformation potential
1Elasticity theory
1Electric field
1Electron delocalization
1Envelope function
1Exchange interactions
1Exciton-exciton interactions
1Film growth
1Gain
1Gallium phosphides
1Hole
1III-V compound
1III-V semiconductors
1Indium Gallium Arsenides Mixed
1Indium Phosphides
1Infrared radiation
1Laser pulse
1Laser radiation
1Line splitting
1Multiple quantum well
1Optical transition
1Performance
1Photo-induced transient spectroscopy
1Plastic deformation
1Polarization
1Polarized spin
1Relaxation
1Repolarization
1Semiconductor laser
1Spectral shift
1Strains
1Temperature dependence
1Temperature range 0000-0013 K
1Tensile stress
1Thickness
1Valence bands
1Wave function
1Yield

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