M. Allix < M. Allovon < M. Alnot

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 24.
[0-20] [0 - 20][0 - 24][20-23][20-40]

Ident.	Authors (with country if any)	Title
001722 (1999)		Hydrogenation of buried passive sections in photonic integrated circuits : a tool to improve propagation losses at ∼ 1.56 μm
001775 (1999)		Agile and fast switching monolithically integrated four wavelength selectable source at 1.55 μm
001938 (1998)		Significant reduction of propagation losses in InGaAsP-InP buried-stripe waveguides by hydrogenation
001A84 (1997-09-29)		Low-loss hydrogenated buried waveguide coupler integrated with a four-wavelength distributive Bragg reflector laser array on InP
001C76 (1997)		Evaluation of the properties of hydrogenated InP/InGaAsP double heterostructure waveguides
002144 (1995)		Monolithic integration on InP of a Wannier Stark modulator with a strained MQW DFB 1.55-μm laser
002274 (1994-06-27)		Efficient polarization insensitive electroabsorption modulator using strained InGaAsP-based quantum wells
002423 (1994)		Determination of nonlinear gain coefficient of semiconductor lasers from above threshold spontaneous emission measurement
002825 (1992)		Optimization of optical waveguide modulators based on Wannier-Stark localization : an experimental study
002860 (1992)		Interest in AlGalnAs on InP for optoelectronic applications
002884 (1992)		High-frequency operation of very low voltage, 1.55μm single-mode optical waveguide modulator based on wannier-stark localization
002904 (1992)		Electroabsorption modulator based on Wannier-Stark localization with 20 GHz/V efficiency
002957 (1991)		Wavelength dependence of temporal response of high-speed GaInAs/AIInAs superlattice photodiodes
002A07 (1991)		MBE growth of graded index AlGaInAs MQW lasers on InP
002A32 (1991)		First DFB GRIN-SCH GalnAs/AlGalnAs 1.55μm MBE MQW active layer buried ridge structure lasers
002A90 (1990)		Very low drive voltage optical waveguide modulation in an InGaAs/InAIAs superlattice
002B06 (1990)		Strained-layer InGaAs/InAlAs multiple quantum wells for efficient optical waveguide modulation at 1.55 μm
002B36 (1990)		Low-threshold GRIN-SCH AlGaInAs 1•55 μm quantum well buried ridge structure lasers grown by molecular beam epitaxy
002B41 (1990)		Interfacial traps in Ga0.47In0.53As/InP heterostructures
002C87 (1989)		Auto lattice matching effect for AllnAs grown by MBE at high substrate temperature
002D42 (1988)		Solid phase recrystallization of implanted III-V semiconductors under uniaxial stress

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List of associated KwdEn.i

Nombre de documents	Descripteur
12	Gallium Indium Arsenides Mixed
9	Experimental study
8	Superlattice
7	Multiple quantum well
6	Aluminium Indium Arsenides Mixed
5	Optical modulator
4	Aluminium Gallium Indium Arsenides Mixed
4	Electrooptical modulator
4	Semiconductor laser
4	Semiconductor materials
3	Epitaxy
3	Gallium arsenides
3	Hydrogenation
3	III-V compound
3	Indium Phosphides
3	Inorganic compound
3	Integrated optoelectronics
3	Microelectronic fabrication
3	Molecular beam
3	Optical waveguide
3	Optoelectronic device
3	Photoluminescence
3	Waveguide
2	Binary compound
2	Buried laser
2	Crystal growth
2	Distributed feedback laser
2	GRIN SCH laser
2	Heterojunction
2	III-V semiconductors
2	Indium arsenides
2	Infrared radiation
2	Injection laser
2	Integrated optics
2	Molecular beam condensation
2	Monolithic integrated circuit
2	Optical losses
2	Optical telecommunication
2	Passivation
2	Photodiode
2	Quaternary compounds
2	Ridge waveguide
2	Semiconducting indium phosphide
2	Semiconductor lasers
2	Temperature
2	Thin film
1	Absorption
1	Acceptor center
1	Activation energy
1	Aluminium Gallium Indium Arsenides
1	Aluminium Indium Arsenides
1	Aluminium arsenides
1	Amorphization
1	BRS laser
1	Bias voltage
1	Blueshift
1	Buried layer
1	Butt joint
1	CVD
1	Characterization
1	Charge carrier concentration
1	Charge carrier mobility
1	Charge carrier trapping
1	Charge carriers
1	Coupled circuits
1	Deep level
1	Deformation
1	Diode
1	Distributed Bragg reflector (DBR) laser arrays
1	Distributed Bragg reflector lasers
1	Doping
1	Electro-optical effects
1	Electroabsorption modulator
1	Electron hole pair
1	Excitonic process
1	Excitons
1	Experiments
1	Fiber optic networks
1	Gain
1	Gallium Arsenides
1	Gallium Arsenides phosphides
1	Gallium phosphide
1	Gallium phosphides
1	Growth interface
1	Heteroepitaxy
1	Heterojunctions
1	Heterostructures
1	Hydrogen
1	Illumination
1	Impurity
1	Indium Arsenides phosphides
1	Indium Phosphine
1	Indium compounds
1	Indium phosphide
1	Indium phosphides
1	Infrared absorption
1	Ion implantation
1	Iron
1	Junction field effect transistor
1	Laser tuning

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