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Index « Auteurs » - entrée « L. Varani »
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L. Van Dyk < L. Varani < L. Vervoort  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 12.
Ident.Authors (with country if any)Title
000311 (2010) Hydrodynamic study of terahertz three-dimensional plasma resonances in InGaAs diodes
000332 (2010) Efficient terahertz mixer from plasma wave downconversion in InGaAs HEMT
000493 (2008) Terahertz oscillations in ultra-thin n-In0.53Ga0.47As ungated channels : Heterostructure Terahertz Devices
000928 (2005) Monte Carlo calculations of hot-electron transport and diffusion noise in GaN and InN
000B51 (2004) Free-carrier grating and terahertz generation from InN n+nn+ structures under streaming plasma instability
000F67 (2002) Monte Carlo calculations of THz generation in wide gap semiconductors
000F68 (2002) Monte Carlo calculations of THz generation in nitrides
000F69 (2002) Monte Carlo analysis of the efficiency of tera-hertz harmonic generation in semiconductor nitrides
001199 (2001) Monte Carlo simulation of terahertz generation in nitrides
001E12 (1996-04-15) Nonequilibrium phonon effects on the transient high-field transport regime in InP
002232 (1994-11-01) Linear and nonlinear analysis of microwave power generation in submicrometer n+nn+ InP diodes
002290 (1994-05-15) Response-function analysis of n+-n-n+ diode generators

List of associated KwdEn.i

Nombre de
documents		Descripteur
7Monte Carlo methods
6Indium nitrides
6THz range
5Electric field effects
4Binary compounds
4Digital simulation
4Gallium nitrides
4Semiconductor materials
4Theoretical study
3Microwave radiation
3Optical phonons
2Carrier mobility
2Gallium Arsenides
2High field
2Hydrodynamic model
2Indium Arsenides
2Inorganic compounds
2Ternary compounds
2Time dependence
2Transit time
11/f noise
1Alternating field
1Aluminium nitrides
1Ambient temperature
1Background noise
1Charge carriers
1Dielectric materials
1Difference frequency
1Diffusion
1Diffusion coefficient
1Diodes
1Doping
1Electric fields
1Electron-phonon interactions
1Experimental study
1Field effect transistors
1Fluctuations
1Free carrier
1Frequency conversion
1Frequency dependence
1Gallium Indium Arsenides Mixed
1Gallium arsenides
1Harmonic generation
1Hot carriers
1Hot electrons
1IV characteristic
1Impurity states
1Indium arsenides
1Indium phosphides
1Instability
1Junction diodes
1Laser beams
1Liquid nitrogen
1Liquid state
1Measuring methods
1Mechanical strength
1Microwave field
1Microwave generation
1Monte Carlo method
1Negative differential conductivity
1Non linear effect
1Nonlinear problems
1Numerical solution
1Ordered systems
1Oscillation frequency
1Oscillation modes
1Oscillations
1Phonon emission
1Photoexcitation
1Plasma
1Plasma oscillations
1Plasmons
1Poisson equation
1Pulses
1Quantum detector
1Relaxation time
1Resonance frequency
1Response functions
1Scattering
1Self consistency
1Self-consistent field
1Semiconductor devices
1Semiconductor diodes
1Simulation
1Size effect
1Spectral density
1Transport theory
1Wide band gap semiconductors
1n n+ junction

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