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Serveur d'exploration sur l'Indium - Analysis (France)

Index « Auteurs » - entrée « L. Travers »
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L. Toujas < L. Travers < L. Uhl  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 7.
Ident.Authors (with country if any)Title
000501 (2008) Strain effects of InP/Si and InP/porous Si studied by spectroscopic ellipsometry
000768 (2006) Structural and photoluminescence studies of InAsN quantum dots grown on GaAs by MBE
000A28 (2004-05-17) GaInAs/GaAs quantum-well growth assisted by Sb surfactant: Toward 1.3 μm emission
000B60 (2004) Effects of GaNAsSb intermediate barriers on GaInNAsSb quantum well grown by molecular beam epitaxy
000C18 (2003-08-18) Investigations on GaInNAsSb quinary alloy for 1.5 μm laser emission on GaAs
000D88 (2003) Comparison of GaInNAs/GaAs and GaInNAs/GaNAs/GaAs quantum wells emitting over 1.3 μm wavelength
001006 (2002) High performance GaInNAs/GaNAs/GaAs narrow ridge waveguide laser diodes

List of associated KwdEn.i

Nombre de
documents		Descripteur
7Molecular beam epitaxy
5Experimental study
4III-V semiconductors
3Crystal growth from vapors
3Gallium arsenides
3Photoluminescence
3Transmission electron microscopy
2Indium compounds
2Quantum wells
2Surfactants
1Antimony
1Arsenic Antimonides
1Arsenic Nitrides
1Arsenic compounds
1Atomic force microscopy
1Band structure
1Binary compounds
1Buffer layer
1Comparative study
1Current density
1Defect formation
1Dielectric function
1Diffusion
1Effective medium model
1Emission spectra
1Experiments
1Fluctuations
1Gallium Arsenides nitrides
1Gallium alloys
1Gallium antimonides
1Gallium compounds
1Gallium indium nitride arsenide
1Gallium nitride arsenide
1Growth mechanism
1Indium Arsenides nitrides
1Indium Phosphides
1Indium antimonides
1Indium nitrides
1Interband transitions
1Interdiffusion
1Measuring methods
1Mechanical properties
1Molecular beams
1Multi-element compounds
1Nanostructured materials
1Optical method
1Porous materials
1Quantum dots
1Quantum well lasers
1Quaternary compounds
1Refractive index
1Self organization
1Semiconducting gallium arsenide
1Semiconductor growth
1Semiconductor lasers
1Semiconductor quantum dots
1Semiconductor quantum wells
1Silicon
1Solid-solid interfaces
1Spectroscopic ellipsometry
1Strain rate
1Strains
1Temperature dependence
1Ternary compounds
1Theoretical study
1Vertical cavity surface emitting laser
1Waveguides
1XRD

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         | HfdSelect -Kh $EXPLOR_AREA/Data/France/Analysis/biblio.hfd

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