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Serveur d'exploration sur l'Indium - Analysis (France)

Index « Auteurs » - entrée « L. Silvestre »
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L. Sicot < L. Silvestre < L. Siozade  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 4.
Ident.Authors (with country if any)Title
001B52 (1997-01-06) 1.3 μm strain-compensated InAsP/InGaP electroabsorption modulator structure grown by atmospheric pressure metal-organic vapor epitaxy
001C02 (1997) Study of growth rate and composition variations in metalorganic vapour phase selective area epitaxy at atmospheric pressure and application to the growth of strained layer DBR lasers
001D20 (1997) 20-Gb/s integrated DBR laser-EA modulator by selective area growth for 1.55-μm WDM applications
002209 (1995) Atmospheric pressure MOVPE growth of high performance polarisation insensitive strain compensated MQW InGaAsP/InGaAs optical amplifier

List of associated KwdEn.i

Nombre de
documents		Descripteur
2Experimental study
2Multiple quantum well
2Photoluminescence
2Semiconductor lasers
2Semiconductor quantum wells
2Strained quantum well
1Application
1Arsenic alloys
1Binary compounds
1Buried ridge structures (BRS)
1Chemical composition
1Circuit gain
1Crystal growth from vapors
1Diffraction gratings
1Distributed Bragg reflection
1Distributed Bragg reflector (DBR) lasers
1Electroabsorption
1Emission spectrum
1Epitaxy
1Experiments
1Frequency division multiplexing
1Gallium Arsenides
1Gallium alloys
1Gallium arsenides
1Gallium phosphides
1Growth from vapor
1Heterojunctions
1III-V compound
1Indium Arsenides
1Indium Phosphides
1Indium alloys
1Indium arsenides
1Indium phosphides
1Integrated circuit manufacture
1Integrated optoelectronics
1Kinetics
1Light amplifiers
1Light modulators
1Luminescence spectrum
1MOVPE method
1Masking
1Microelectronic processing
1Modulators
1Monolithic integrated circuits
1Multilayers
1Optical characteristic
1Optical waveguides
1Organometallics
1Phosphorus alloys
1Production process
1Quantum confined Stark effect
1Quaternary compound
1Quaternary compounds
1Selective area
1Selective area growth (SAG)
1Semiconducting gallium arsenide
1Semiconducting indium phosphide
1Semiconductor amplifier
1Semiconductor device manufacture
1Semiconductor materials
1TE mode
1TEM
1TM mode
1Ternary compound
1Ternary compounds
1Thickness
1VPE

Pour manipuler ce document sous Unix (Dilib)

EXPLOR_STEP=IndiumV3/Data/France/Analysis

HfdIndexSelect -h $EXPLOR_AREA/Data/France/Analysis/Author.i -k "L. Silvestre" 

HfdIndexSelect -h $EXPLOR_AREA/Data/France/Analysis/Author.i  \
                -Sk "L. Silvestre" \
         | HfdSelect -Kh $EXPLOR_AREA/Data/France/Analysis/biblio.hfd

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{{Explor lien
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   |area=    IndiumV3
   |flux=    France
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   |clé=    L. Silvestre
}}
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