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Serveur d'exploration sur l'Indium - Analysis (France)

Index « Auteurs » - entrée « L. Porte »
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L. Ponsonnet < L. Porte < L. R. Dawson  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 13.
Ident.Authors (with country if any)Title
000A76 (2004) Stress and surface energies versus surface nanostructuring: the InGaAs/InP(0 0 1) epitaxial system
001385 (2000) Strained InAs nanostructures self-organised on high-index InP(113)B
001857 (1998-07) Layer by layer growth mode stabilization and step-edge smoothing of cation-stabilized In1-xGaxAs strained layers grown on InP
001924 (1998) Surface spinodal decomposition in low temperature Al048In052As grown on InP(001) by molecular beam epitaxy
001933 (1998) Strain effect on the growth of 3D In(Ga)As wire structures on InP(001)
001A72 (1997-10-15) Role of surface energy and surface reconstructions on the 2D-to-3D growth-mode transition of strained InxGa1-xAs layers on InP(001)
001B35 (1997-04-15) Role of the step curvature in the stabilization of coherently strained epitaxial structures
001C50 (1997) Influence of step edges elastic relaxation on the morphology of compressively and tensilely strained In1-xGaxAs layers epitaxially grown on InP
001E80 (1996) Scanning tunneling microscopy study of the epitaxial growth of strained In0.82Ga0.18As layers on InP
002023 (1995-09-01) Evidence for inhomogeneous growth rates in partially relaxed InGaAs/InP heterostructures
002203 (1995) Connection of a scanning tunneling microscope with a molecular beam epitaxy chamber and analysis of the vibration isolation system
002538 (1993) Surface investigation by scanning tunneling microscopy in liquid medium
002898 (1992) Evaluation of surface roughness of technological InP substrates by in situ scanning tunneling microscopy imaging in H2SO4 solution

List of associated KwdEn.i

Nombre de
documents		Descripteur
12Experimental study
8Gallium arsenides
8Indium arsenides
8Molecular beam epitaxy
8Surface structure
6STM
6Ternary compounds
4III-V semiconductors
4Semiconductor materials
3Crystal growth
3Epitaxial layers
3Indium compounds
3Morphology
3Scanning tunneling microscopy
3Surface reconstruction
2Compressive stress
2In situ
2Indium Phosphides
2Indium phosphides
2Inorganic compound
2Island structure
2RHEED
2Roughness
2Semiconductor epitaxial layers
2Semiconductor growth
2Strains
2Stress relaxation
2Surface
2Surface energy
2Tensile stress
1Aluminium arsenides
1Arsenic compounds
1Atomic force microscopy
1Chemical composition
1Chemical etching
1Crystal growth from vapors
1Cyclic voltammetry
1Defects
1Dislocations
1Elastic deformation
1Fabrication property relation
1Gallium compounds
1Growth rate
1Heteroepitaxy
1Heterojunctions
1Heterostructures
1High resolution
1Instrumentation
1Insulation
1Interface states
1Interface structure
1Liquid medium
1Liquid solid interface
1Mechanical vibrations
1Nanostructures
1Overpressure
1Oxidation
1Phase separation
1Pyrographite
1Quantum wells
1Scanning probe microscopy
1Self organization
1Solid solutions
1Spinodal decomposition
1Step
1Strained layer
1Stress effects
1Stresses
1Support
1Surface phase transformations
1Surface tension
1Surface treatment
1TEM
1Theoretical study
1Three-dimensional systems
1Topography
1Two-dimensional systems
1Ultrahigh vacuum

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