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Serveur d'exploration sur l'Indium - Analysis (France)

Index « Auteurs » - entrée « L. Lassabatere »
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L. Larger < L. Lassabatere < L. Lazzarini  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 12.
Ident.Authors (with country if any)Title
000E77 (2002-02-15) Structure, surface composition, and electronic properties of CuInS2 and CuIn(1-x)AlxS2
001444 (2000) Growth and optimization of InAs/GaSb and GaSb/InAs interfaces
002089 (1995-01) Problems relevant to the use of optical pyrometers for substrate temperature measurements and controls in molecular beam epitaxy
002125 (1995) Schottky diode properties of Au, In-GaP (111) and (110) chemically etched surfaces
002303 (1994-04) Contribution à l'étude de la croissance de GaSb et d'InAs par epitaxie par jets moléculaires
002341 (1994) UV-O3 preparation of InAs (100) surfaces prior to MBE growth
002779 (1992) Sur des propriétés des surfaces de quelques semiconducteurs III-V déduites de mesures de photovoltage
002C53 (1989) Modifications of InP(110) surfaces induced by electron beam during Auger measurement
002E71 (1987) The interaction of Ag and Al overlayers with InP(110): surface and iode studies of the effect of Sb interlayers
002F81 (1986) The interaction of Ag, In and Al overlayers with InP (110): surface and diode studies of the effect of indium interlayers
003078 (1985) A study of the cleaved InP surface by CPD and SPV topographies
003082 (1984) Sur l'analyse de l'ancrage du niveau de Fermi à la surface des composés III-V

List of associated KwdEn.i

Nombre de
documents		Descripteur
9Experimental study
6Indium Phosphides
6Semiconductor materials
5Fermi level
4Indium arsenides
4Inorganic compound
4Molecular beam epitaxy
3Gallium antimonides
3Photovoltaic effect
3Theoretical study
2AES
2Acceptor center
2Aluminium
2Atomic force microscopy
2Auger electron spectrometry
2Binary compounds
2Chemical etching
2Cleavage
2Coatings
2Density of states
2Donor center
2Gallium Arsenides
2Gallium Phosphides
2III-V compound
2Indium
2Interface electron state
2Ozone
2RHEED
2Schottky barrier diode
2Silver
2Substrates
2Surface
2Surface electron state
2Ultraviolet radiation
2Work function
1Adsorption
1Aluminium antimonides
1Aluminium compounds
1Anchoring
1Annealing
1Antimony
1Auger electron spectra
1Auger emission
1Barrier height
1Binary compound
1Calibration
1Charge carrier concentration
1Chemical contamination
1Copper compounds
1Crystal growth
1Crystal growth from vapors
1Desorption
1Diode
1Doping
1Electron hole pair
1Electrons
1Gallium Antimonides
1Gallium arsenides
1Gold
1Growth mechanism
1Heterojunctions
1Heterostructures
1Illumination
1Indium compounds
1Influence
1Irradiation
1Manufacturing process
1Material testing
1Metallizing
1Microelectronic fabrication
1N type conductivity
1Operating mode
1Optical pyrometers
1P type conductivity
1Potential barrier
1Potential difference
1Pretreatment
1Residual impurity
1Scanning electron microscopy
1Semiconductor metal contact
1Semiconductor thin films
1Solid-solid interfaces
1Spray coatings
1Substrate
1Surface analysis
1Surface composition
1Surface conditions
1Surface diffusion
1Surface topography
1Surface treatments
1Temperature control
1Temperature measurement
1Ternary semiconductors
1Topography
1Transition layer
1Voltage current curve
1XRD

Pour manipuler ce document sous Unix (Dilib)

EXPLOR_STEP=IndiumV3/Data/France/Analysis

HfdIndexSelect -h $EXPLOR_AREA/Data/France/Analysis/Author.i -k "L. Lassabatere" 

HfdIndexSelect -h $EXPLOR_AREA/Data/France/Analysis/Author.i  \
                -Sk "L. Lassabatere" \
         | HfdSelect -Kh $EXPLOR_AREA/Data/France/Analysis/biblio.hfd

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   |clé=    L. Lassabatere
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