Serveur d'exploration sur l'Indium - Analysis (France)

Index « Auteurs » - entrée « L. Largeau »
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L. Lajaunie < L. Largeau < L. Larger  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 17.
Ident.Authors (with country if any)Title
000025 (2013) Semibulk InGaN: A novel approach for thick, single phase, epitaxial InGaN layers grown by MOVPE
000174 (2011) Structural analysis of site-controlled InAs/InP quantum dots
000236 (2011) Direct epitaxial growth of InP based heterostructures on SrTiO3/Si(0 0 1) crystalline templates
000434 (2009) Influence of the surface reconstruction on the growth of InP on SrTiO3(0 01)
000768 (2006) Structural and photoluminescence studies of InAsN quantum dots grown on GaAs by MBE
000946 (2005) Indentation deformation of thin {111} GaAs and InSb foils : influence of polarity
000A06 (2005) Conservative indentation flow throughout thin (011) InP foils
000A49 (2004-01-12) Morphology and composition of highly strained InGaAs and InGaAsN layers grown on GaAs substrate
000B37 (2004) Indentation punching through thin (011) InP
000B60 (2004) Effects of GaNAsSb intermediate barriers on GaInNAsSb quantum well grown by molecular beam epitaxy
000C18 (2003-08-18) Investigations on GaInNAsSb quinary alloy for 1.5 μm laser emission on GaAs
000D88 (2003) Comparison of GaInNAs/GaAs and GaInNAs/GaNAs/GaAs quantum wells emitting over 1.3 μm wavelength
000F75 (2002) Metal-organic vapor-phase epitaxy of defect-free InGaAs/GaAs quantum dots emitting around 1.3 μm
001073 (2001-10-01) Bimodal distribution of Indium composition in arrays of low-pressure metalorganic-vapor-phase-epitaxy grown InGaAs/GaAs quantum dots
001076 (2001-09-17) Structural effects of the thermal treatment on a GaInNAs/GaAs superlattice
001309 (2000-10-16) Comparison of nitrogen incorporation in molecular-beam epitaxy of GaAsN, GaInAsN, and GaAsSbN
001374 (2000) TEM study of the morphological and compositional instabilities of InGaAsP epitaxial structures

List of associated KwdEn.i

Nombre de
documents
Descripteur
16III-V semiconductors
12Experimental study
8Gallium arsenides
8Photoluminescence
6Molecular beam epitaxy
5Indium compounds
4Crystal growth from vapors
4Growth mechanism
4Transmission electron microscopy
4VPE
4XRD
3Epitaxial layers
3III-V compound
3Indentation
3Indium arsenides
3Indium phosphide
3Indium phosphides
3MOVPE method
3Nanostructures
3Plastic flow
3Quantum dots
3Semiconductor growth
3TEM
3Thin films
2Arrays
2Cathodoluminescence
2Epitaxy
2Indium antimonides
2MOCVD
2Nanostructured materials
2Phosphides
2Plasticity
2Scanning transmission electron microscopy
2Semiconductor materials
2Semiconductor quantum wells
2Strontium titanates
2Ternary compounds
1Accommodation
1Annealing
1Applied load
1Array
1Arsenic Antimonides
1Arsenic Nitrides
1Atomic force microscopy
1Binary compound
1Binary compounds
1Buffer layer
1Characterization
1Chemical analysis
1Chemical composition
1Comparative study
1Crystal faces
1Crystal morphology
1Crystal perfection
1Crystal twin
1Crystalline material
1Crystallographic direction
1Crystallographic plane
1Defect formation
1Desorption
1Diffusion
1Digital simulation
1Dislocation motion
1Emission spectra
1Encapsulation
1Fluctuations
1Gallium Arsenides nitrides
1Gallium Arsenides phosphides
1Gallium antimonides
1Gallium compounds
1Gallium nitride
1Heterostructures
1High temperature
1Indium Arsenides nitrides
1Indium Arsenides phosphides
1Indium nitride
1Indium nitrides
1Inductively coupled plasma
1Inorganic compounds
1Instability
1Interdiffusion
1Interfaces
1Interferometry
1Interlayers
1Ion beam etching
1Lattice parameters
1Light interferometry
1Line broadening
1Lithography
1Low pressure
1MOCVD coatings
1Mechanical properties
1Mismatch lattice
1Mismatching
1Molecular beam
1Monolithic integrated circuit
1Morphological changes
1Multi-element compounds
1Nanomaterial synthesis
1Nanotechnology

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