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Serveur d'exploration sur l'Indium - Analysis (France)

Index « Auteurs » - entrée « L. Konczewicz »
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L. Klaras < L. Konczewicz < L. Kronik  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 11.
Ident.Authors (with country if any)Title
000185 (2011) Performances Analysis of Symmetrical and Asymmetrical InAs/GaSb Superlattice pin Photodiode
000325 (2010) Electronic Properties of InAs/GaSb Superlattice Detectors to Evaluate High Temperature Operation
000804 (2006) Localized donor state above the conduction band minimum in InN revealed by high pressure and temperature transport experiments
000A70 (2004) Surprisingly low built-in electric fields in quaternary AlInGaN heterostructures
000C53 (2003-03-10) Determination of built-in electric fields in quaternary InAlGaN heterostructures
000E21 (2002-11-15) Time-resolved spectroscopy of (Al,Ga,In)N based quantum wells: Localization effects and effective reduction of internal electric fields
000F25 (2002) Small built-in electric fields in quaternary InAIGaN heterostructures
001258 (2001) Electrical transport properties in (111) growth-axis GaAlAs/GaInAs heterostructures
001285 (2001) A novel selectively 6-doped AlGaAs/(In, Ga, As)/GaAs pseudomorphic heterostructure
002E87 (1987) Shallow donorlike impurity states in n-type InP in magnetic field under hydrostatic pressure
002E88 (1987) Shallow donor-like impurity states in magnetic field in n-type InP

List of associated KwdEn.i

Nombre de
documents		Descripteur
7Experimental study
5Hall effect
4Heterostructures
4Photoluminescence
4Pressure effects
3Donor center
3III-V semiconductors
3Indium nitrides
3Time resolved spectra
2Aluminium arsenides
2Aluminium compounds
2Ambient temperature
2Binary compounds
2Carrier density
2Gallium arsenides
2Gallium compounds
2Gallium nitrides
2Indium Arsenides
2Indium Phosphides
2Indium arsenides
2Indium compounds
2Localized states
2Magnetic field
2Magnetoconductivity
2Molecular beam epitaxy
2Monolayers
2Quaternary compounds
2Semiconductor quantum wells
2Shallow impurities
2Superlattices
2Temperature dependence
2Ternary compounds
1Absorption spectra
1Aluminium nitrides
1Band structure
1Binding energy
1Concentration distribution
1Critical point
1Cryogenic temperature
1Defect states
1Dielectric polarization
1Doping
1Electric field effects
1Electric fields
1Electrical conductivity
1Electrical properties
1Electro-optical effects
1Electron mobility
1Electronic properties
1Hexagonal lattices
1High field
1High pressure
1High temperature
1Hydrostatic pressure
1Impurity interaction
1Infrared radiation
1Inorganic compound
1Interface states
1Internal field
1Line intensity
1Luminescence decay
1Mott transition
1Nonradiative transitions
1Performance evaluation
1Photodiodes
1Piezo-optical effects
1Piezoelectric semiconductors
1Planar doping
1Quantity ratio
1Quantum Hall effect
1Quantum detector
1Quantum wells
1Resonant states
1SIMS
1Screening
1Semiconductor materials
1Shubnikov-de Haas effect
1Temperature effects
1Theoretical study
1Voltage measurement

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