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Serveur d'exploration sur l'Indium - Analysis (France)

Index « Auteurs » - entrée « L. Henry »
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L. Heinrich < L. Henry < L. Hirsch  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 6.
Ident.Authors (with country if any)Title
002A35 (1991) Fabrication and luminescence of narrow reactive ion etched In1-xGaxAs/InP and GaAs/Ga1-xAlxAs quantum wires
002B15 (1990) Pseudomorphic GaInP Schottky diode and MSM detector on InP
002B32 (1990) Microfabrication and optical study of reactive ion etched InGaAsP/InP and GaAs/GaAlAs quantum wires
002B37 (1990) Low-temperature DC characteristics of pseudomorphic Ga0.18In0.82P/InP/Ga0.47In0.53As HEMT
002C43 (1989) Pseudomorphic GaInP Schottky diode and high electron mobility transistor on InP
002F19 (1987) GalnAs junction fet fully dry etched by metal organic reactive ion etching technique

List of associated KwdEn.i

Nombre de
documents		Descripteur
5Indium Phosphides
4Experimental study
3Gallium Indium Arsenides Mixed
3Inorganic compound
3Semiconductor materials
3Voltage current curve
2Aluminium Gallium Arsenides Mixed
2Barrier height
2Field effect transistor
2Gallium Arsenides
2Gallium Indium Phosphides Mixed
2High electron mobility transistor
2III-V compound
2Photoluminescence
2Preparation
2Quantum wire
2Scanning electron microscopy
2Schottky barrier
2Schottky barrier diode
2Thickness
1Charge carrier recombination
1Chemical composition
1Confinement
1Electrical characteristic
1Electrical properties
1Energy gap
1Engraving
1Gallium Indium Arsenides
1Gallium Indium Arsenides phosphides Mixed
1Gallium Indium Phosphides
1Heterojunction
1Ideality
1Implementation
1Improvement
1Junction field effect transistor
1Lifetime
1Luminescence decay
1MSM structure
1Manufacturing
1Microelectronic fabrication
1Performance characteristic
1Pulse response
1Reactive ion etching
1Self aligned gate technology
1Solid solution
1Spectral line shift
1Transconductance
1Velocity

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