Serveur d'exploration sur l'Indium - Analysis (France)

Index « Auteurs » - entrée « L. H. Li »
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L. H. G. Tizei < L. H. Li < L. Haji  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 8.
Ident.Authors (with country if any)Title
000678 (2007) Growth of InAs bilayer quantum dots for long-wavelength laser emission on GaAs
000A28 (2004-05-17) GaInAs/GaAs quantum-well growth assisted by Sb surfactant: Toward 1.3 μm emission
000B31 (2004) Investigation of recombination processes involving defect-related states in (Ga, In)(As, Sb, N) compounds
000B53 (2004) Experimental investigation of the CMN matrix element in the band anticrossing model for GaAsN and GaInAsN layers
000B60 (2004) Effects of GaNAsSb intermediate barriers on GaInNAsSb quantum well grown by molecular beam epitaxy
000C18 (2003-08-18) Investigations on GaInNAsSb quinary alloy for 1.5 μm laser emission on GaAs
000C19 (2003-08-18) Influence of carrier localization on modulation mechanism in photoreflectance of GaAsN and GaInAsN
000D88 (2003) Comparison of GaInNAs/GaAs and GaInNAs/GaNAs/GaAs quantum wells emitting over 1.3 μm wavelength

List of associated KwdEn.i

Nombre de
documents
Descripteur
7Experimental study
7III-V semiconductors
5Gallium arsenides
5Molecular beam epitaxy
5Photoluminescence
3Indium compounds
3Quaternary compounds
3Transmission electron microscopy
2Annealing
2Crystal growth from vapors
2Energy gap
2Gallium compounds
2Photoreflectance
2Quantum wells
2Surfactants
2Temperature dependence
2Ternary compounds
1Aluminium arsenides
1Antimony
1Arsenic Antimonides
1Arsenic Nitrides
1Arsenic compounds
1Band theory
1Bilayers
1Blue shift
1Buffer layer
1Comparative study
1Conduction bands
1Crystal defects
1Current density
1Defect characterization
1Defect level
1Defect recombination
1Diffusion
1Electronic structure
1Emission spectra
1Gallium Arsenides Antimonides Nitrides
1Gallium Arsenides Nitrides
1Gallium Arsenides nitrides
1Gallium Indium Arsenides Nitrides
1Gallium antimonides
1Gallium nitrides
1Growth mechanism
1Growth rate
1High density
1III-V compound
1Indium Arsenides nitrides
1Indium antimonides
1Indium arsenides
1Indium nitrides
1Interdiffusion
1Kramers Kronig analysis
1Laser diodes
1Level crossing
1Luminescence spectrometry
1Matrix elements
1Modulation spectra
1Multi-element compounds
1Nanostructured materials
1Quantum dots
1Quantum well lasers
1Resonant states
1Semiconductor epitaxial layers
1Semiconductor lasers
1Semiconductor materials
1Solid-solid interfaces
1Thermal annealing
1Threshold current
1Waveguides
1XRD

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