Serveur d'exploration sur l'Indium - Analysis (France)

Index « Auteurs » - entrée « L. Gouskov »
Attention, ce site est en cours de développement !
Attention, site généré par des moyens informatiques à partir de corpus bruts.
Les informations ne sont donc pas validées.
L. Gonzalez < L. Gouskov < L. Grenouillet  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 7.
Ident.Authors (with country if any)Title
001E92 (1996) Photodetection at 3.65 μm in the atmospheric window using InAs0.91Sb0.09/GaAs heteroepitaxy
001F72 (1996) Be+ implanted GaInAsSb/GaSb photodiodes
002190 (1995) Elaboration and characterization of InAsSb grown on GaSb and GaAs substrates
002849 (1992) MOVPE growth Ga0.6In0.4Sb photodiodes for 5.55 μm detection
002A27 (1991) GaInAsSb/GaSb pn photodiodes for detection to 2.4μm
002F16 (1987) Heat treatment effect on p type Zn doped InP substrates
002F92 (1986) Si-implanted n+-InP/p-InP junctions: electrical characterization and noise

List of associated KwdEn.i

Nombre de
documents
Descripteur
3Epitaxy
3Experimental study
2Epitaxial layers
2IV characteristic
2Indium Phosphides
2Ion implantation
2Photodetector
2Photodiode
2Semiconductor materials
11/f noise
1Antimony Gallium
1Antimony Gallium Indium Arsenides Mixed
1Antimony alloys
1Arsenic alloys
1Background noise
1Beryllium ions
1Binary alloys
1Binary compound
1Binary compounds
1Carrier density
1Carrier mobility
1Charge carrier generation
1Charge carrier recombination
1Chemical vapor deposition
1Crystal growth from vapors
1Detection
1Doping
1Electrical properties
1Gallium Arsenides
1Gallium Indium Antimonides Mixed
1Gallium alloys
1Gallium antimonides
1Gallium arsenides
1Growth from vapor
1Heat treatment
1Heteroepitaxy
1Heterojunction
1Heterojunctions
1Homojunction
1III-V compound
1Indium Antimonides
1Indium Antimonides arsenides
1Indium alloys
1Indium antimonides
1Indium arsenides
1Infrared detection
1Junction
1LPE
1Liquid phase
1Mismatch lattice
1Organometallic compound
1P n+ junction
1Passivation
1Photoconductivity
1Photodiodes
1Photoelectronic properties
1Production process
1Quaternary alloys
1Semiconductor device
1Silicon
1Solar cell
1Ternary compound
1Ternary compounds
1Thin film
1Thin films
1VPE
1Voltage current curve
1White noise
1Zinc
1p n junctions

Pour manipuler ce document sous Unix (Dilib)

EXPLOR_STEP=IndiumV3/Data/France/Analysis
HfdIndexSelect -h $EXPLOR_AREA/Data/France/Analysis/Author.i -k "L. Gouskov" 
HfdIndexSelect -h $EXPLOR_AREA/Data/France/Analysis/Author.i  \
                -Sk "L. Gouskov" \
         | HfdSelect -Kh $EXPLOR_AREA/Data/France/Analysis/biblio.hfd 

Pour mettre un lien sur cette page dans le réseau Wicri

{{Explor lien
   |wiki=   *** parameter Area/wikiCode missing *** 
   |area=    IndiumV3
   |flux=    France
   |étape=   Analysis
   |type=    indexItem
   |index=    Author.i
   |clé=    L. Gouskov
}}

Wicri

This area was generated with Dilib version V0.5.77.
Data generation: Mon Jun 9 10:27:54 2014. Site generation: Thu Mar 7 16:19:59 2024