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Serveur d'exploration sur l'Indium - Analysis (France)

Index « Auteurs » - entrée « L. Dmowski »
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L. Di Cioccio < L. Dmowski < L. Dobaczewski  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 11.
Ident.Authors (with country if any)Title
001E78 (1996) Short period superlattices under hydrostatic pressure
002A20 (1991) High-pressure investigation of an (InAl)As-(InGa)As resonant tunnelling double-barrier structure
002B14 (1990) Quantum and classical lifetimes in a Ga0.49In0.51P/GaAs heterojunction
002C46 (1989) Persistent photoconductivity in Ga0.49In0.51P/GaAs heterojunctions
002D28 (1988) Two-dimensional electron gas at a Ga0.47In0.53As/(AlxGa1-x)0.48In0.52As interface
002F56 (1987) A study of parallel conduction and the quantum Hall effect in GaInAs-AlInAs heterojunctions using magnetotransport measurements under hydrostatic pressure
002F84 (1986) The effect of hydrostatic pressure on a Ga0.47In0.53As/InP heterojunction with three electric sub-bands
003001 (1986) Pressure dependence of the electronic effective mass and effective g-factor in the narrow gap semiconductor InSb
003024 (1986) First observation of two-dimensional hole gas in a Ga0.47In0.53As/InP heterojunction grown by metalorganic vapor deposition
003025 (1986) First observation of the quantum Hall effect in a Ga0.47In0.53As-InP heterostructure with three electric subbands
003111 (1984) Intraconduction band magneto-optical study of InSb under hydrostatic pressure

List of associated KwdEn.i

Nombre de
documents		Descripteur
6Gallium Indium Arsenides Mixed
6Heterojunction
6Inorganic compound
5Experimental study
5Quantum Hall effect
5Semiconductor materials
4Band structure
4Hydrostatic pressure
4Photoconductivity
4Pressure
3Effective mass
3Electron gas
3Indium Phosphides
3Shubnikov de Haas effect
2Aluminium Indium Arsenides Mixed
2Gallium Arsenides
2Indium Antimonides
2Magnetoconductivity
2Two dimensional model
1Aluminium Gallium Indium Arsenides Mixed
1Approximation theory
1Asymmetry
1Bloch transport
1Charge carrier
1Charge carrier concentration
1Charge carrier mobility
1Complex defect
1Conduction band
1Confinement
1Cyclotron resonance
1Donor center
1Double barrier
1Electron density
1Electron paramagnetic resonance
1Electronic dispersion
1Envelope function approximation
1Experiments
1G factor
1Gallium Indium Phosphides
1Gallium Indium Phosphides Mixed
1Heterojunctions
1High field
1Lifetime
1Logarithmic function
1Magnetooscillatory properties
1Molecular beam epitaxy
1Quantum effect
1Resonant tunnel effect
1Scaling law
1Semiconducting aluminum compounds
1Semiconducting gallium arsenide
1Semiconducting gallium compounds
1Semiconducting indium phosphide
1Semiconducting silicon
1Semiconductor device structures
1Semiconductor doping
1Semiconductor superlattices
1Short period superlattices
1Solid solid interface
1Substrates
1Temperature
1Theoretical study
1Theory
1Transport process
1Two dimensional system
1Voltage current curve

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