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Serveur d'exploration sur l'Indium - Analysis (France)

Index « Auteurs » - entrée « L. Chusseau »
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L. Chaput < L. Chusseau < L. Cinotti  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 9.
Ident.Authors (with country if any)Title
000332 (2010) Efficient terahertz mixer from plasma wave downconversion in InGaAs HEMT
001731 (1999) GaInSb/AlGaAsSb strained quantum well semiconductor lasers for 1.55 μm operation
001772 (1999) Antimonide distributed Bragg reflectors and vertical cavity lasers on InP and GaSb for 1.55 μm operation
001C36 (1997) Molecular beam epitaxy growth of 1.3 μm high-reflectivity AlGaAsSb/AlAsSb Bragg mirror
001D34 (1996-11-11) Carrier-induced change due to doping in refractive index of InP: Measurements at 1.3 and 1.5 μm
001D64 (1996-08-26) Response to ′′Comment on ′Accurate refractive index measurements of doped and undoped InP by a grating coupling technique′ ′′ [Appl. Phys. Lett. 69, 1332 (1996)]
002096 (1995) Indice de réfraction de GaSb, Ga0,88In0,12As0,1Sb0,9 de 2100 nm à 2160 nm
002A25 (1991) Gain compression and phase-amplitude coupling in GaInAs quantum well lasers with three, five and seven wells
002B78 (1990) Dynamic behaviors of semiconductor lasers under strong sinusoidal current modulation : modeling and experiments at 1.3 μm

List of associated KwdEn.i

Nombre de
documents		Descripteur
6Experimental study
3Molecular beam epitaxy
2Binary compounds
2Gallium antimonides
2Mirrors
2Multiple quantum well
2Semiconductor laser
2Semiconductor lasers
2Semiconductor materials
2Ternary compounds
2Theoretical study
1Aluminium antimonides
1Ambient temperature
1Amplitude
1Arsenic additions
1Bragg reflection
1Compounded structure
1Compression
1Coupling
1Difference frequency
1Digital simulation
1Distributed Bragg reflector (DBR) lasers
1Doped materials
1Doping
1Electromagnetic wave diffraction
1Field effect transistors
1Frequency
1Gain
1Gallium Arsenides
1Gallium Indium Arsenides Mixed
1Gallium Indium Arsenides phosphides Mixed
1Gallium arsenides
1Indium Arsenides
1Indium additions
1Indium antimonides
1Indium arsenides
1Indium phosphides
1Infrared radiation
1Injection current
1Injection laser
1Laser beam melting
1Laser beams
1Laser cavities
1Light absorption
1Light reflection
1Modulation
1Molecular beams
1Optical beam
1Optical microcavity
1Optimization
1Oscillation frequency
1Phase
1Phosphorus
1Plasma
1Quantum detector
1Quantum efficiency
1Quaternary compounds
1Reflection spectrum
1Refractive index
1SCH lasers
1Semiconducting aluminum compounds
1Semiconducting indium phosphide
1Semiconductor device structures
1Strained quantum well
1Surface emitting lasers
1Surface melting
1THz range
1Theory
1Threshold current
1Vertical cavity laser

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