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Index « Auteurs » - entrée « K. Zekentes »
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K. Zeaiter < K. Zekentes < K. Zitouni  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 11.
Ident.Authors (with country if any)Title
001E28 (1996-02-15) Weak antilocalization and spin precession in quantum wells
002265 (1994-08-01) Electrical transport quantum effects in the In0.53Ga0.47As/In0.52Al0.48As heterostructure on silicon
002422 (1994) Determination of the basic parameters of pseudomorphic GaInAs quantum wells by means of simultaneous transport and optical investigations
002536 (1993) Temperature dependence of the photoreflectance of strained and lattice-matched InGaAs/InAlAs single quantum wells
002565 (1993) Room-temperature photoreflectance as an efficient tool for study of the crystalline quality of InAlAs layers grown on InP substrates
002566 (1993) Room temperature photoreflectance as a powerful tool to characterize the crystalline quality of InAlAs layers grown on InP substrates
002581 (1993) Photoreflectance studies of lattice-matched and strained InGaAs/InAlAs single quantum wells
002586 (1993) Photo-induced current transient spectroscopy of Al0.48In0.52As semi-insulating layers grown on InP by molecular beam epitaxy
002622 (1993) Materials problems for the development of InGaAs/InAlAs HEMT technology
002726 (1993) Characterization of lattice-matched and strained GaInAs/AlInAs HEMT structures by photoluminescence spectroscopy
002747 (1993) A comprehensive optimization of InAlAs molecular beam epitaxy for InGaAs/InAlAs HEMT technology

List of associated KwdEn.i

Nombre de
documents		Descripteur
7Experimental study
6Indium arsenides
5Aluminium arsenides
5Gallium Indium Arsenides Mixed
5Ternary compounds
4Molecular beam epitaxy
4Optical properties
4Semiconductor materials
3Aluminium Indium Arsenides Mixed
3Gallium arsenides
3High electron mobility transistor
3Photoluminescence
2Characterization
2Crystal growth
2Electron mobility
2Quantum well
2Thin films
1Aluminium Indium Arsenides
1Amplitude phase
1Band offset
1Binary compounds
1Charge carrier mobility
1Chemical composition
1Conduction band
1Conduction bands
1Crystal defect
1Crystal perfection
1Dislocation
1Dislocation density
1Electrical properties
1Electron density
1Electronic component
1Energy-level transitions
1Epitaxy
1Extended defect
1Heterostructures
1High temperature
1III-V compound
1Impurity
1Indium phosphides
1Infrared spectra
1Inorganic compound
1Interband transition
1Interfaces
1Least squares method
1Line widths
1Low temperature
1Magnetoresistance
1Microstructure
1Mismatch lattice
1Modeling
1Modulation
1Molecular beam condensation
1Multijunction structure
1Multiple layer
1Optical modulation
1Optical reflection
1Optical transition
1Performance
1Phase transformation
1Photo-induced transient spectroscopy
1Quantum Hall effect
1Quantum wells
1Reflection spectrum
1Semiconductor device
1Shubnikov-de Haas effect
1Silicon
1Spectral reflectance
1Spin orientation
1Stacking fault density
1Support
1Surfaces
1TEM
1Temperature
1Temperature dependence
1Temperature measurement
1Temperature range 400-1000 K
1Thin film
1Transmission electron microscopy
1Transport process

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