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Index « Auteurs » - entrée « K. Ketata »
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K. Kazmierski < K. Ketata < K. Kham  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 20.
Ident.Authors (with country if any)Title
000D83 (2003) Determination of beryllium and self-interstitial diffusion parameters in InGaAs
001045 (2002) Anomalous thermal redistribution of beryllium implanted in InGaAs: a possible interaction with extended defects
001272 (2001) Comparative models for diffusion of Be in InGaAs/InP heterostructures
001286 (2001) A model for diffusion of beryllium in InGaAs/InP heterostructures
001481 (2000) Beryllium diffusion in InGaAs/InGaAsP structures grown by gas source molecular beam epitaxy
001482 (2000) Be diffusion in InGaAs/InP heterostructures grown by gas source molecular beam epitaxy
001642 (1999) The modeling of beryllium diffusion in InGaAsP layers grown by GSMBE under nonequilibrium conditions
001665 (1999) Simulation of post-growth Be diffusion in InGaAsP grown by GSMBE
001672 (1999) Redistribution of Be in InGaAsP layers grown by GSMBE during post-growth annealing
001768 (1999) Be diffusion in InGaAs, InGaAsP epitaxial layers and across InGaZs/InGaAsP, InGaAs/InP heterointerfaces
001778 (1999) A comprehensive study of beryllium diffusion in InGaAs using different forms of kick-out mechanism
001985 (1998) Investigation of Be diffusion in InGaAs using Kick-out mechanism
001A31 (1998) Be diffusion in InGaAs layers grown by gas source molecular beam epitaxy
001A32 (1998) Be diffusion in GaInAs homojunction structure grown by CBE
001A39 (1998) A study of Be diffusion in InGaAsP layers grown by gas-source molecular beam epitaxy
001B78 (1997) p-Type diffusion in InGaAs epitaxial layers using two models : A concentration dependent diffusivity and a point defect nonequilibrium
001D04 (1997) Beryllium diffusion in InGaAs epitaxial layers: a point defect nonequilibrium model
001D05 (1997) Beryllium diffusion in InGaAs compounds grown by chemical beam epitaxy
001F91 (1995-12) Modélisation de la diffusion du Be dans les structures épitaxiales en InGaAs pour les dispositifs microoptoélectroniques
002011 (1995-10-09) Be diffusion mechanisms in InGaAs during post-growth annealing

List of associated KwdEn.i

Nombre de
documents		Descripteur
20Diffusion
18Beryllium additions
18Experimental study
18Gallium arsenides
18Indium arsenides
12Doped materials
10Epitaxial layers
10SIMS
10Semiconductor materials
10Ternary compounds
8Depth profiles
8Indium phosphides
7Rapid thermal annealing
6Impurity diffusion
5Annealing
5Doping
5GSMBE method
5Gallium phosphides
5III-V semiconductors
5Interstitials
5Quaternary compounds
5Thin films
4Heterostructures
4Temperature dependence
4Theoretical study
3Binary compounds
3Concentration distribution
3Mechanism
3Simulation
2Beryllium
2Boundary conditions
2Crystal growth from vapors
2Diffusion coefficient
2Diffusion profile
2Diffusivity
2Digital simulation
2Doping profiles
2III-V compound
2Interstitial impurities
2Modeling
2Modelling
2Non equilibrium conditions
2Point defects
1Arrhenius equation
1Arsenides phosphides
1Buried layers
1Chemical beam epitaxy
1Computerized simulation
1Crystal defect interaction
1Crystal defects
1Crystal doping
1Defect formation
1Fermi level
1Finite difference method
1Gallium Arsenides
1Gallium Arsenides phosphides
1Heat treatments
1Heterojunctions
1Homojunctions
1Impurities
1Impurity distribution
1Impurity scattering
1Indium Arsenides
1Indium Arsenides phosphides
1Inorganic compounds
1Ion implantation
1Local equilibrium
1Microelectronic fabrication
1Optoelectronic device
1Phosphides
1Phosphorus ions
1Sandwich structures
1Segregation
1Solid-solid interfaces
1Substitutional impurities
1Ternary compound
1Thermal annealing
1p-type conductors

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