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Serveur d'exploration sur l'Indium - Analysis (France)

Index « Auteurs » - entrée « K. H. Ploog »
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K. H. Gundlach < K. H. Ploog < K. H. Schlereth  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 11.
Ident.Authors (with country if any)Title
000A37 (2004-04-05) Nanoscale analysis of the In and N spatial redistributions upon annealing of GaInNAs quantum wells
000C37 (2003-05-19) Interplay between the growth temperature, microstructure, and optical properties of GaInNAs quantum wells
000C51 (2003-03-24) GaInNAs/GaAs quantum wells grown by molecular-beam epitaxy emitting above 1.5 μm
000D86 (2003) Correlations between structural and optical properties of GaInNAs quantum wells grown by MBE
001976 (1998) Long-wavelength (Ga,In)Sb/GaSb strained quantum well lasers grown by molecular beam epitaxy
001D43 (1996-10-07) Structural and optical properties of strained (Ga,In)Sb/GaSb quantum wells grown by molecular-beam epitaxy
002055 (1995-04-24) Novel plastic strain-relaxation mode in highly mismatched III-V layers induced by two-dimensional epitaxial growth
002113 (1995) Surfactant-mediated molecular-beam epitaxy of III-V strained-layer heterostructures
002521 (1993) X-ray standing wave and high-resolution x-ray diffraction study of the GaAs/InAs/GaAs(100) heterointerface
002547 (1993) Strained InAs/AlxGa0.48-xIn0.52As heterostructures : a tunable quantum well materials system for light emission from the near-IR to the mid-IR
002876 (1992) InAs/Ga0.47In0.53As quantum wells : a new III-V materials system for light emission in the mid-infrared wavelength range

List of associated KwdEn.i

Nombre de
documents		Descripteur
9Experimental study
6Photoluminescence
5Gallium arsenides
4III-V semiconductors
4Indium arsenides
4Transmission electron microscopy
3Binary compounds
3Gallium compounds
3Heterojunctions
3Indium compounds
3Molecular beam epitaxy
3Semiconductor materials
3Semiconductor quantum wells
2Annealing
2Chemical composition
2Crystal growth from vapors
2Epitaxy
2High-resolution methods
2III-V compound
2Microstructure
2Quantum wells
2Solid-solid interfaces
2Stimulated emission
2Strained quantum well
2Wide band gap semiconductors
2XRD
1Activation energy
1Aluminium arsenides
1Arrhenius equation
1Atomic force microscopy
1Band splitting
1Binary compound
1Buried layers
1Charge carrier recombination
1Compressive stress
1Crystal microstructure
1Depth profiles
1Diffusion
1Gallium Antimonides
1Gallium Arsenides nitrides
1Gallium Indium Arsenides Mixed
1Growth mechanism
1Heteroepitaxy
1Homojunctions
1Indium Antimonides
1Indium Arsenides
1Indium Arsenides nitrides
1Infrared radiation
1Injection lasers
1Inorganic compound
1Interface roughness
1Interface structure
1Luminescence
1Microelectronic processing
1Misfit dislocations
1Molecular beam condensation
1Monolayers
1Morphology
1Non radiative recombination
1Optical properties
1Optical transition
1Property structure relationship
1Quantum well lasers
1Quaternary compounds
1RHEED
1Roughness
1Semiconductor growth
1Semiconductor heterojunctions
1Semiconductor lasers
1Solid solutions
1Spectral line shift
1Standing waves
1Stress relaxation
1Surface segregation
1Surfactants
1TEM
1Temperature
1Temperature effect
1Ternary compound
1Ternary compounds
1Thermal characteristic
1Thickness
1Thin films
1Ultrathin layer
1X radiation

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