Serveur d'exploration sur l'Indium - Analysis (France)

Index « Auteurs » - entrée « J. Y. Marzin »
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List of bibliographic references

Number of relevant bibliographic references: 17.
Ident.Authors (with country if any)Title
000400 (2009) Single photon sources using InAs/InP quantum dots
000526 (2008) One-step nano-selective area growth (nano-SAG) of localized InAs/InP quantum dots : First step towards single-photon source applications
001C04 (1997) Strong-coupling regime in pillar semiconductor microcavities
001C75 (1997) Exciton dynamics in quantum-well microcavities
001E24 (1996-03-01) Kinematic versus dynamic approaches of x-ray diffraction simulation. Application to the characterization of InGaAs/InGaAlAs multiple quantum wells
001E79 (1996) Self-organized growth of InAs/GaAs quantum boxes
001F26 (1996) InAs/GaAs quantum boxes obtained by self-organized growth: intrinsic electronic properties and applications
002A01 (1991) Modulated molecular beam epitaxy : a successful route toward high quality highly strained heterostructures
002A35 (1991) Fabrication and luminescence of narrow reactive ion etched In1-xGaxAs/InP and GaAs/Ga1-xAlxAs quantum wires
002B32 (1990) Microfabrication and optical study of reactive ion etched InGaAsP/InP and GaAs/GaAlAs quantum wires
002B79 (1990) Differentiation of the non radiative recombination properties of the two interfaces of MBE grown GaAs-GaAlAs quantum wells
002C35 (1989) Structural and optical properties of high quality InAs/GaAs short-period superlattices grown by migration-enhanced epitaxy
002C49 (1989) Optical investigation of the band structure of InAs/GaAs short-period superlattices
002D92 (1988) High quality ultrathin InAs/GaAs quantum wells grown by standard and low-temperature modulated-fluxes molecular beam epitaxy
003010 (1986) Luminescence investigations of highly strained-layer InAs-GaAs superlattices
003022 (1986) Growth and characterization of InxGa1-xAs/InyGa1-yAs strained-layer superlattice on InP substrate
003072 (1985) Molecular beam epitaxial growth and optical properties of Ga0.47In0.53As/Al0.48In0.52As on InP and Ga1-xInxAs/GaAs on GaAs quantum wells

List of associated KwdEn.i

Nombre de
documents
Descripteur
10Photoluminescence
9Gallium Arsenides
8Semiconductor materials
7Experimental study
7Indium Arsenides
7Inorganic compound
5Indium arsenides
5Superlattice
4Binary compounds
4Gallium arsenides
4Indium Phosphides
3Aluminium Gallium Arsenides Mixed
3Deformation
3Gallium Indium Arsenides Mixed
3III-V semiconductors
3Lifetime
3Preparation
3Quantum dots
3Quantum well
3Quantum wells
2Aluminium arsenides
2Band structure
2Cavities
2Excitation spectrum
2Excitons
2Heterojunction
2Level anticrossing
2Low temperature
2Luminescence decay
2Molecular beam condensation
2Molecular beam epitaxy
2Optical absorption
2Optical microcavity
2Quantum wire
2Resonant states
2Scanning electron microscopy
2Spectral line shift
2Strained superlattice
2Ternary compounds
2Time resolution
1Aluminium Indium Arsenides Mixed
1Application
1Atomic layer method
1Charge carrier recombination
1Charge carriers
1Chemical composition
1Confinement
1Crystal growth
1Effective mass
1Electron emission
1Electronic properties
1Energy gap
1Excited states
1Exciton
1Excitonic process
1Experiments
1Gallium Indium Arsenides phosphides Mixed
1Growth mechanism
1Growth rate
1Indium phosphide
1Infrared absorption
1Inhomogeneous broadening
1Internal stress
1Lithography
1Low pressure
1Luminescence
1MMBE method
1MOVPE method
1Manufacturing
1Measuring methods
1Modulation
1Multiple quantum well
1Nanomaterial synthesis
1Nanometer scale
1Nanostructured materials
1Negative resist
1Non radiative recombination
1Optical resonators
1Optical transition
1Organometallic compounds
1Patterning
1Period
1Photonic crystals
1Picosecond
1Pillar structure
1Polaritons
1Quantum boxes
1Quantum communication
1Raman scattering
1Reactive ion etching
1Recombination center
1Relaxation processes
1Reviews
1Selective area
1Selective growth
1Self organized growth
1Semiconducting gallium arsenide
1Semiconducting indium compounds
1Semiconductor growth
1Semiconductor quantum wells

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